Fabrication of black silicon by Ni assisted chemical etching

2018 ◽  
Vol 5 (1) ◽  
pp. 015020 ◽  
Author(s):  
Kai Gao ◽  
Honglie Shen ◽  
Youwen Liu ◽  
Quntao Tang ◽  
Ye Jiang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Black Silicon

Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching

2019 ◽  
Vol 806 ◽  
pp. 24-29 ◽  
Author(s):  
Olga V. Volovlikova ◽  
S.A. Gavrilov ◽  
P.I. Lazarenko ◽  
A.V. Kukin ◽  
A.A. Dudin ◽  
...  
Keyword(s):  
Refractive Index ◽  
Treatment Duration ◽  
Chemical Etching ◽  
Visible Region ◽  
High Light ◽  
Silicon Films ◽  
Black Silicon ◽  
Metal Assisted Chemical Etching ◽  
Light Absorptance

This paper examines the influence of etching regimes on the reflectance of black silicon formed by Ni-assisted chemical etching. Black silicon exhibits properties of high light absorptance. The measured minimum values of the reflectance (R-min) of black silicon with thickness of 580 nm formed by metal-assisted chemical etching (MACE) for 60 minutes at 460 lx illumination were 2,3% in the UV region (200–400 nm), 0,5% in the visible region (400–750 nm) and 0,3% in the IR region (750–1300 nm). The findings showed that the reflectance of black silicon depends on its thickness, illumination and treatment duration. In addition, the porosity and refractive index were calculated.

Enhanced etching rate of black silicon by Cu/Ni Co-assisted chemical etching process

2018 ◽  
Vol 88 ◽  
pp. 250-255 ◽  
Author(s):  
Kai Gao ◽  
Honglie Shen ◽  
Youwen Liu ◽  
Ye Jiang ◽  
Chaofan Zheng ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Etching Rate ◽  
Etching Process ◽  
Black Silicon

Broadband Anti-Reflection in Black Silicon Fabricated by Two-Step Silver-Assisted Wet Chemical Etching for Photovoltaics

2020 ◽  
Vol 301 ◽  
pp. 167-174
Author(s):  
Auwal Abdulkadir ◽  
Nur Afidah Md. Noor ◽  
Azlan Abdul Aziz ◽  
Mohd Zamir Pakhuruddin
Keyword(s):  
Chemical Etching ◽  
Short Circuit ◽  
Wavelength Region ◽  
Weighted Average ◽  
Short Circuit Current ◽  
Morphological Characterization ◽  
Etching Time ◽  
Black Silicon ◽  
Si Nanowires ◽  
Ag Nps

This paper reports broadband anti-reflection in black silicon (b-Si) fabricated by two-step metal-assisted chemical etching (MACE) for potential photovoltaic (PV) applications. The method involves deposition of silver nanoparticles (Ag NPs) in aqueous solution of HF:AgNO3, followed by etching in HF:H2O2:DI H2O solution for different duration (10-25 s). Effects of etching time towards surface morphological and optical properties of b-Si nanowires are investigated. Surface morphological characterization confirms presence of b-Si nanowires with heights of 350-570 nm and diameter of 150-300 nm. The b-Si nanowires exhibit outstanding broadband anti-reflection due to refractive index grading effect. This is represented as weighted average reflection (WAR) in the 300-1100 nm wavelength region. After 20 s of etching, b-Si nanowires with height of 570 nm and width of about 200 nm are produced. The nanowires demonstrate WAR of 5.5%, which represents the lowest WAR in this investigation. This results in absorption of 95.6% at wavelength of 600 nm. The enhanced broadband light absorption yields maximum potential short-circuit current density (Jsc(max)) of up to 39.7 mA/cm2, or 51% enhancement compared to c-Si reference. This facile b-Si fabrication method for broadband enhanced anti-reflection could be a promising technique to produce potential PV devices with high photocurrent.

Sign in / Sign up

Export Citation Format

Share Document