The Role of Metal-Catalyzed Chemical Etching Black Silicon in the Reduction of Light- and Elevated Temperature-Induced Degradation in P-Type Multicrystalline Wafers

2021 ◽  
pp. 1-7
Author(s):  
Muhammad Umair Khan ◽  
Giuseppe Scardera ◽  
Shuai Zou ◽  
Daqi Zhang ◽  
Malcolm Abbott
Keyword(s):  
Elevated Temperature ◽  
Chemical Etching ◽  
Black Silicon ◽  
Metal Catalyzed ◽  
P Type

The Role of Dark Annealing in Light and Elevated Temperature Induced Degradation in p-Type Mono-Like Silicon

2020 ◽  
Vol 10 (4) ◽  
pp. 992-1000
Author(s):  
Hang Cheong Sio ◽  
Di Kang ◽  
Xinyu Zhang ◽  
Jie Yang ◽  
Jinsheng Jin ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
P Type

1758-P: Type 2 Diabetes–Associated Mood Disorders: Role of Insulin Resistance in Serotonergic Neurons

Diabetes ◽  
2020 ◽  
Vol 69 (Supplement 1) ◽  
pp. 1758-P
Author(s):  
HUGO MARTIN ◽  
SÉBASTIEN BULLICH ◽  
FABIEN DUCROCQ ◽  
MARION GRALAND ◽  
CLARA OLIVRY ◽  
...  
Keyword(s):  
Insulin Resistance ◽  
Type 2 Diabetes ◽  
Mood Disorders ◽  
Serotonergic Neurons ◽  
P Type

Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching

2019 ◽  
Vol 806 ◽  
pp. 24-29 ◽  
Author(s):  
Olga V. Volovlikova ◽  
S.A. Gavrilov ◽  
P.I. Lazarenko ◽  
A.V. Kukin ◽  
A.A. Dudin ◽  
...  
Keyword(s):  
Refractive Index ◽  
Treatment Duration ◽  
Chemical Etching ◽  
Visible Region ◽  
High Light ◽  
Silicon Films ◽  
Black Silicon ◽  
Metal Assisted Chemical Etching ◽  
Light Absorptance

This paper examines the influence of etching regimes on the reflectance of black silicon formed by Ni-assisted chemical etching. Black silicon exhibits properties of high light absorptance. The measured minimum values of the reflectance (R-min) of black silicon with thickness of 580 nm formed by metal-assisted chemical etching (MACE) for 60 minutes at 460 lx illumination were 2,3% in the UV region (200–400 nm), 0,5% in the visible region (400–750 nm) and 0,3% in the IR region (750–1300 nm). The findings showed that the reflectance of black silicon depends on its thickness, illumination and treatment duration. In addition, the porosity and refractive index were calculated.

Ambivalent role of ascorbic acid in the metal-catalyzed oxidation of oligopeptides

2021 ◽  
pp. 111510
Author(s):  
Nikolett Bodnár ◽  
Katalin Várnagy ◽  
Lajos Nagy ◽  
Gizella Csire ◽  
Csilla Kállay
Keyword(s):  
Ascorbic Acid ◽  
Metal Catalyzed Oxidation ◽  
Metal Catalyzed ◽  
Catalyzed Oxidation

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

1985 ◽  
Vol 56 ◽  
Author(s):  
F.-C. Su ◽  
S. Levine ◽  
P. E. Vanier ◽  
F. J. Kampas
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Excess Conductivity ◽  
The Novel ◽  
Semiconductor Superlattice ◽  
Deposition Parameters ◽  
Superlattice Structures ◽  
Argon Dilution ◽  
P Type

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

Fabrication of black silicon by Ni assisted chemical etching

2018 ◽  
Vol 5 (1) ◽  
pp. 015020 ◽  
Author(s):  
Kai Gao ◽  
Honglie Shen ◽  
Youwen Liu ◽  
Quntao Tang ◽  
Ye Jiang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Black Silicon

An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

2016 ◽  
Vol 30 (20) ◽  
pp. 1650257
Author(s):  
Meng Zhao ◽  
Wenjun Wang ◽  
Jun Wang ◽  
Junwei Yang ◽  
Weijie Hu ◽  
...  
Keyword(s):  
First Principles ◽  
Ionization Energy ◽  
Hole Concentration ◽  
Valence Band Maximum ◽  
First Principles Calculations ◽  
Mutual Compensation ◽  
Efficient Approach ◽  
P Type ◽  
Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

p-Type conductivity of GeTe: The role of lone-pair electrons

2012 ◽  
Vol 249 (10) ◽  
pp. 1902-1906 ◽  
Author(s):  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Junji Tominaga
Keyword(s):  
Lone Pair ◽  
Type Conductivity ◽  
P Type ◽  
Lone Pair Electrons
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