The edge termination controlled kinetics in graphene chemical vapor deposition growth

Many aspects in the chemical vapor deposition (CVD) growth of graphene remain unclear such as its behavior near the catalyst grain boundaries. Here we investigate the CVD growth mechanism of graphene across the Cu grain boundaries using unidirectional aligned graphene domains, which simplifies the analysis of both graphene and Cu to a large extent. We found that for a graphene domain grown across the Cu grain boundary, the domain orientation is determined by the Cu grain where the domain nucleation center is located, and the Cu grain boundary will not change the growth behavior for this graphene domain. This growth mechanism is consistent with the Cu-step-attached nucleation and edge-attachment-limited growth mechanism for H-terminated graphene domains and will provide more guidance for the synthesis of high-quality graphene with less domain boundaries.

Download Full-text

The transition metal surface dependent methane decomposition in graphene chemical vapor deposition growth

Nanoscale ◽

10.1039/c7nr02743e ◽

2017 ◽

Vol 9 (32) ◽

pp. 11584-11589 ◽

Cited By ~ 37

Author(s):

Xinlan Wang ◽

Qinghong Yuan ◽

Jia Li ◽

Feng Ding

Keyword(s):

Chemical Vapor Deposition ◽

Transition Metal ◽

Metal Surface ◽

Vapor Deposition ◽

Chemical Vapor ◽

Shape Evolution ◽

Chemical Vapor Deposition Growth ◽

Catalytic Activities ◽

Transition Metal Surface ◽

Cvd Growth

The catalytic activities of various catalysts are found to be responsible for the shape evolution of graphene domains during CVD growth.

Download Full-text

Evolution of Surface Roughness During CVD Growth

MRS Proceedings ◽

10.1557/proc-440-157 ◽

1996 ◽

Vol 440 ◽

Author(s):

E. Chason ◽

T.M. Mayer ◽

D.P. Adams ◽

H. Huang ◽

T. Diaz De La Rubia ◽

...

Keyword(s):

Surface Roughness ◽

Monte Carlo ◽

Chemical Vapor Deposition ◽

Monte Carlo Simulations ◽

Vapor Deposition ◽

Chemical Vapor ◽

Molecular Precursors ◽

Cvd Growth ◽

Physical And Chemical ◽

Kinetics Of

AbstractMonte Carlo simulations of physical and chemical vapor deposition are used to study roughening kinetics of films that grow by nucleation and coalescence of clusters. The effects of interlayer transport, preferential dissociation of molecular precursors and energetic differences between the clusters and the substrate are examined.

Download Full-text

Plasma Oxidation Kinetics of Gold Nanoparticles and Their Encapsulation in Graphene Shells by Chemical Vapor Deposition Growth

The Journal of Physical Chemistry C ◽

10.1021/jp301009f ◽

2012 ◽

Vol 116 (23) ◽

pp. 12861-12874 ◽

Cited By ~ 30

Author(s):

Junchi Wu ◽

Wenwu Shi ◽

Nitin Chopra

Keyword(s):

Gold Nanoparticles ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Oxidation Kinetics ◽

Chemical Vapor ◽

Plasma Oxidation ◽

Chemical Vapor Deposition Growth ◽

Kinetics Of

Download Full-text

MODELING THE CVD GROWTH OF III-V- COMPOUNDS

Modern Physics Letters B ◽

10.1142/s0217984901002208 ◽

2001 ◽

Vol 15 (17n19) ◽

pp. 647-650

Author(s):

J. MIMILA-ARROYO ◽

J. DIAZ REYES

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Substrate Surface ◽

Chemical Vapor ◽

Theoretical Models ◽

Experimental Results ◽

Reversible Chemical Reaction ◽

Cvd Growth ◽

Growing Conditions ◽

Kinetics Of

Chemical vapor deposition is widely used for growing semiconductors. In it the best growing conditions are obtained on an empirical way. Its theoretical models are sophisticated and not accurate enough to correctly explain the experimental results. In this work, we present a general model to explain the epitaxial growth kinetics of III-V semiconductor materials by chemical vapor deposition. The model is based on a reversible chemical reaction between the transporting gas and the III element at the source and the same reaction, at the substrate surface. However, the model considers that the III element might have a different chemical activity at each one of those surfaces. The model explains experimental results reported in the literature on III-V materials, by several laboratories, over decades.

Download Full-text

Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth

ACS Nano ◽

10.1021/nn300726r ◽

2012 ◽

Vol 6 (4) ◽

pp. 3243-3250 ◽

Cited By ~ 131

Author(s):

Haibo Shu ◽

Xiaoshuang Chen ◽

Xiaoming Tao ◽

Feng Ding

Keyword(s):

Chemical Vapor Deposition ◽

Structural Stability ◽

Vapor Deposition ◽

Chemical Vapor ◽

Chemical Vapor Deposition Growth ◽

Kinetics Of

Download Full-text

The transition metal surface passivated edges of hexagonal boron nitride (h-BN) and the mechanism of h-BN's chemical vapor deposition (CVD) growth

Physical Chemistry Chemical Physics ◽

10.1039/c5cp04833h ◽

2015 ◽

Vol 17 (43) ◽

pp. 29327-29334 ◽

Cited By ~ 25

Author(s):

Ruiqi Zhao ◽

Feifei Li ◽

Zhirong Liu ◽

Zhongfan Liu ◽

Feng Ding

Keyword(s):

Chemical Vapor Deposition ◽

Transition Metal ◽

Metal Surface ◽

Vapor Deposition ◽

Hexagonal Boron Nitride ◽

Chemical Vapor ◽

Metal Catalyst ◽

Chemical Vapor Deposition Growth ◽

Transition Metal Surface ◽

Cvd Growth

The kinetics of chemical vapor deposition growth of h-BN on a transition metal catalyst surface is dominated by the metal surface passivated edge structures.

Download Full-text

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137653 ◽

1995 ◽

Vol 53 ◽

pp. 256-257

Author(s):

J. Drucker ◽

R. Sharma ◽

J. Kouvetakis ◽

K.H.J. Weiss

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Effect ◽

Line Drawing ◽

Chemical Vapor ◽

Environmental Cell ◽

Engineering Changes ◽

Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

Download Full-text