The transition metal surface passivated edges of hexagonal boron nitride (h-BN) and the mechanism of h-BN's chemical vapor deposition (CVD) growth

2015 ◽  
Vol 17 (43) ◽  
pp. 29327-29334 ◽  
Author(s):  
Ruiqi Zhao ◽  
Feifei Li ◽  
Zhirong Liu ◽  
Zhongfan Liu ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Metal Surface ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Chemical Vapor Deposition Growth ◽  
Transition Metal Surface ◽  
Cvd Growth

The kinetics of chemical vapor deposition growth of h-BN on a transition metal catalyst surface is dominated by the metal surface passivated edge structures.

The transition metal surface dependent methane decomposition in graphene chemical vapor deposition growth

Nanoscale ◽  
2017 ◽  
Vol 9 (32) ◽  
pp. 11584-11589 ◽  
Author(s):  
Xinlan Wang ◽  
Qinghong Yuan ◽  
Jia Li ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Metal Surface ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Shape Evolution ◽  
Chemical Vapor Deposition Growth ◽  
Catalytic Activities ◽  
Transition Metal Surface ◽  
Cvd Growth

The catalytic activities of various catalysts are found to be responsible for the shape evolution of graphene domains during CVD growth.

Revealing stable geometries and magic clusters of hexagonal boron nitride in the nucleation of chemical vapor deposition growth on Ni(111)/Cu(111) surfaces: a theoretical study

2020 ◽  
Vol 22 (7) ◽  
pp. 4023-4031 ◽  
Author(s):  
Hongxia Zhu ◽  
Xiaolei Zhao ◽  
Huanhuan Li ◽  
Ruiqi Zhao
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Theoretical Study ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Magic Clusters ◽  
Dft Simulations

The stable geometries of both different-sized and magic clusters of CVD-prepared hexagonal BN on Ni(111)/Cu(111) are revealed based on DFT simulations.

A mini review on chemical vapor deposition growth of wafer-scale h-BN single crystals

Nanoscale ◽  
2021 ◽  
Author(s):  
Lin Li ◽  
Ye Zhang ◽  
ruijie Zhang ◽  
Ziyi Han ◽  
Huanli Dong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Single Crystals ◽  
Vapor Deposition ◽  
Flat Surface ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
The Past ◽  
Excellent Stability

Hexagonal boron nitride (h-BN), with its excellent stability, flat surface and large bandgap, plays a role in a variety of fundamental science and technology fields. The past few years have...

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

NANO ◽  
2018 ◽  
Vol 13 (08) ◽  
pp. 1850088 ◽  
Author(s):  
Yang Wang ◽  
Yu Cheng ◽  
Yunlu Wang ◽  
Shuai Zhang ◽  
Chen Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Domain Boundaries ◽  
Cvd Growth ◽  
Graphene Domain

Many aspects in the chemical vapor deposition (CVD) growth of graphene remain unclear such as its behavior near the catalyst grain boundaries. Here we investigate the CVD growth mechanism of graphene across the Cu grain boundaries using unidirectional aligned graphene domains, which simplifies the analysis of both graphene and Cu to a large extent. We found that for a graphene domain grown across the Cu grain boundary, the domain orientation is determined by the Cu grain where the domain nucleation center is located, and the Cu grain boundary will not change the growth behavior for this graphene domain. This growth mechanism is consistent with the Cu-step-attached nucleation and edge-attachment-limited growth mechanism for H-terminated graphene domains and will provide more guidance for the synthesis of high-quality graphene with less domain boundaries.

The geometry of hexagonal boron nitride clusters in the initial stages of chemical vapor deposition growth on a Cu(111) surface

Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13366-13376 ◽  
Author(s):  
Zhong-Qiang Liu ◽  
Jichen Dong ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Critical Size ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Chemical Vapor Deposition Growth ◽  
One Dimensional

In the initial stages of chemical vapor deposition on a Cu(111) surface, one-dimensional Bn–1Nn (N-rich environment) or BnNn–1 (B-rich) chains first appear, and they transform to two-dimensional sp2 networks or h-BN islands at a critical size of 13.

New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

2021 ◽  
Vol 125 (3) ◽  
pp. 1774-1783
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Cong Jingkun ◽  
Mingsheng Xu ◽  
Deren Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Silicon Substrates ◽  
Chemical Vapor Deposition Growth ◽  
Catalyst Free ◽  
Insight Into

What are the active carbon species during graphene chemical vapor deposition growth?

Nanoscale ◽  
2015 ◽  
Vol 7 (5) ◽  
pp. 1627-1634 ◽  
Author(s):  
Haibo Shu ◽  
Xiao-Ming Tao ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Active Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Carbon Species ◽  
Growth Modes ◽  
Transition Metal Surfaces ◽  
Surface Active

Surface active carbon species depend on the type of metal substrates during graphene chemical vapor deposition, which implies different growth modes of graphene on the transition-metal surfaces.

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