Crack-free 2D-inverse opal anatase TiO2 films on rigid and flexible transparent conducting substrates: low temperature large area fabrication and electrochromic properties

2014 ◽  
Vol 2 (37) ◽  
pp. 7804-7810 ◽  
Author(s):  
Hua Li ◽  
Guillaume Vienneau ◽  
Martin Jones ◽  
Balaji Subramanian ◽  
Jacques Robichaud ◽  
...  
Keyword(s):  
Low Temperature ◽  
Anatase Tio2 ◽  
Tio2 Films ◽  
Inverse Opal ◽  
Large Area ◽  
Hard Template ◽  
Electrochromic Properties ◽  
Opal Film ◽  
Transparent Conducting

A ‘dynamic-hard-template’ strategy is developed for large-area crack-free synthesis of 2D anatase TiO2 inverse opal film on rigid and flexible ITO substrates by using PS templates.

Fabrication of Large Area Crack‐Free 2D and 3D WO 3 Inverse Opal Films by “Dynamic Hard Template Infiltration Strategy”

2019 ◽  
Vol 4 (11) ◽  
pp. 3266-3273
Author(s):  
Hua Li ◽  
Shali Li ◽  
Jacques Robichaud ◽  
Bao‐Lian Su ◽  
Yahia Djaoued
Keyword(s):  
Inverse Opal ◽  
Large Area ◽  
Hard Template ◽  
2D And 3D

scholarly journals Low-temperature electrodeposition approach leading to robust mesoscopic anatase TiO2 films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Snehangshu Patra ◽  
Christian Andriamiadamanana ◽  
Michal Tulodziecki ◽  
Carine Davoisne ◽  
Pierre-Louis Taberna ◽  
...  
Keyword(s):  
Low Temperature ◽  
Anatase Tio2 ◽  
Tio2 Films

A pleasant blue-green colored 2D vanadium dioxide inverse opal monolayer: large area fabrication and its thermochromic application

2020 ◽  
Vol 8 (33) ◽  
pp. 11572-11580
Author(s):  
Hua Li ◽  
Habiba Djaoued ◽  
Jacques Robichaud ◽  
Yahia Djaoued
Keyword(s):  
Vanadium Dioxide ◽  
Inverse Opal ◽  
Large Area ◽  
Hard Template ◽  
Green Color

2D VO2 IO film with a pleasant blue-green color is fabricated by an improved “dynamic hard-template” infiltration strategy.

Electrical Characteristics of Anatase-TiO2 Films by Low Temperature Fabrication

2012 ◽  
Author(s):  
M. Kimura ◽  
T. Nabatame ◽  
H. Yamada ◽  
A. Ohi ◽  
T. Chikyow ◽  
...  
Keyword(s):  
Low Temperature ◽  
Anatase Tio2 ◽  
Tio2 Films ◽  
Electrical Characteristics

scholarly journals A polystyrene/WO3 opal composite monolayer film as a building block for the fabrication of 3D WO3 inverse opal films

RSC Advances ◽  
2017 ◽  
Vol 7 (73) ◽  
pp. 46406-46413 ◽  
Author(s):  
Hua Li ◽  
Jian Feng Wang ◽  
Guillaume Vienneau ◽  
Guo Bin Zhu ◽  
Xi Gang Wang ◽  
...  
Keyword(s):  
Building Block ◽  
Inverse Opal ◽  
Large Area ◽  
Monolayer Film ◽  
Hard Template ◽  
Bottom Up

Large area Polystyrene/WO3 opal composite monolayers were successfully fabricated via a modified “dynamic-hard-template” infiltration strategy, and then used as building block for the synthesis of 3D WO3 inverse opal films in a bottom-up approach.

Facile fabrication of crack-free large-area 2D WO3 inverse opal films by a ‘dynamic hard-template’ strategy on ITO substrates

2014 ◽  
Vol 50 (17) ◽  
pp. 2184 ◽  
Author(s):  
Hua Li ◽  
Jolaine Thériault ◽  
Bruno Rousselle ◽  
Balaji Subramanian ◽  
Jacques Robichaud ◽  
...  
Keyword(s):  
Inverse Opal ◽  
Large Area ◽  
Hard Template ◽  
Facile Fabrication

Fabrication of F–Nb co-doped transparent conducting TiO2 films using the sol-gel method

2021 ◽  
Vol 126 ◽  
pp. 105675
Author(s):  
Yang Ren ◽  
Haiyan He ◽  
Yunwei Wang ◽  
Ying Gong ◽  
Gaoyang Zhao
Keyword(s):  
Sol Gel ◽  
Tio2 Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Transparent Conducting ◽  
Co Doped

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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