Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.

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High‐Quality Thin Films of UiO‐66‐NH2 by Coordination Modulated Layer‐by‐Layer Liquid Phase Epitaxy

Chemistry - A European Journal ◽

10.1002/chem.202005416 ◽

2021 ◽

Author(s):

Roland A. Fischer ◽

A. Lisa Semrau

Keyword(s):

Thin Films ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Layer By Layer ◽

High Quality

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Scintillation efficiency and X-ray imaging with the RE-Doped LuAG thin films grown by liquid phase epitaxy

Radiation Measurements ◽

10.1016/j.radmeas.2012.01.015 ◽

2012 ◽

Vol 47 (4) ◽

pp. 311-314 ◽

Cited By ~ 9

Author(s):

Jan Tous ◽

Karel Blazek ◽

Miroslav Kucera ◽

Martin Nikl ◽

Jiri A. Mares

Keyword(s):

Thin Films ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

X Ray ◽

X Ray Imaging ◽

Scintillation Efficiency

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Ion-Implantation Getiering of Impurities in CdTe

MRS Proceedings ◽

10.1557/proc-161-45 ◽

1989 ◽

Vol 161 ◽

Cited By ~ 1

Author(s):

M. H. Jin ◽

K. M. James ◽

C. E. Jones ◽

J. L. Merz

Keyword(s):

Liquid Phase ◽

Ion Implantation ◽

Epitaxial Growth ◽

Liquid Phase Epitaxy ◽

High Quality ◽

Annealing Behavior ◽

Ternary Compounds ◽

Implantation Damage ◽

Anneal Time

ABSTRACTThis is the first reported use of ion-implantation damage gettering of impurities in CdTe to provide high-quality substrates for the epitaxial growth of appropriate binary or ternary compounds, or for related applications. We describe the results of photoluminescence (PL) measurements performed on samples of Bridgeman-grown CdTe to study both the annealing behavior and gettering effects in this material. From the PL results, it was found that impurity gettering occurs at temperatures at which liquid phase epitaxy take place (∼500°C) so that these two fabrication procedures are compatible. It was also found that the optimum anneal time at this temperature is four hours.

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Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

Chemical Communications ◽

10.1039/c7cc03270f ◽

2017 ◽

Vol 53 (46) ◽

pp. 6191-6194 ◽

Cited By ~ 28

Author(s):

Valeriya Chernikova ◽

Osama Shekhah ◽

Ioannis Spanopoulos ◽

Pantelis N. Trikalitis ◽

Mohamed Eddaoudi

Keyword(s):

Thin Films ◽

Liquid Phase ◽

Epitaxial Growth ◽

Liquid Phase Epitaxy ◽

Liquid Phase Epitaxial ◽

Growth Method ◽

Liquid Phase Epitaxial Growth ◽

Bold Type

Through combining the supermolecular building layer (SBL) approach for designing MOFs with the liquid phase epitaxy growth method, we demonstrate that it is possible to precisely control the epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures.

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High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.159.87 ◽

2010 ◽

Vol 159 ◽

pp. 87-90

Author(s):

M. Milanova ◽

Roumen Kakanakov ◽

G. Koleva ◽

P. Vitanov ◽

V. Bakardjieva ◽

...

Keyword(s):

Liquid Phase ◽

Liquid Phase Epitaxy ◽

X Ray Diffraction ◽

High Quality ◽

X Ray ◽

Al Content ◽

Quaternary Compounds ◽

Transmission Electron

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

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