Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

CrystEngComm ◽  
2016 ◽  
Vol 18 (4) ◽  
pp. 608-615 ◽  
Author(s):  
F. Riva ◽  
P.-A. Douissard ◽  
T. Martin ◽  
F. Carlà ◽  
Y. Zorenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
X Ray

High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.

Scintillation efficiency and X-ray imaging with the RE-Doped LuAG thin films grown by liquid phase epitaxy

2012 ◽  
Vol 47 (4) ◽  
pp. 311-314 ◽  
Author(s):  
Jan Tous ◽  
Karel Blazek ◽  
Miroslav Kucera ◽  
Martin Nikl ◽  
Jiri A. Mares
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray ◽  
X Ray Imaging ◽  
Scintillation Efficiency

Ion-Implantation Getiering of Impurities in CdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M. H. Jin ◽  
K. M. James ◽  
C. E. Jones ◽  
J. L. Merz
Keyword(s):  
Liquid Phase ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
Annealing Behavior ◽  
Ternary Compounds ◽  
Implantation Damage ◽  
Anneal Time

ABSTRACTThis is the first reported use of ion-implantation damage gettering of impurities in CdTe to provide high-quality substrates for the epitaxial growth of appropriate binary or ternary compounds, or for related applications. We describe the results of photoluminescence (PL) measurements performed on samples of Bridgeman-grown CdTe to study both the annealing behavior and gettering effects in this material. From the PL results, it was found that impurity gettering occurs at temperatures at which liquid phase epitaxy take place (∼500°C) so that these two fabrication procedures are compatible. It was also found that the optimum anneal time at this temperature is four hours.

Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

2017 ◽  
Vol 53 (46) ◽  
pp. 6191-6194 ◽  
Author(s):  
Valeriya Chernikova ◽  
Osama Shekhah ◽  
Ioannis Spanopoulos ◽  
Pantelis N. Trikalitis ◽  
Mohamed Eddaoudi
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Liquid Phase Epitaxial ◽  
Growth Method ◽  
Liquid Phase Epitaxial Growth ◽  
Bold Type

Through combining the supermolecular building layer (SBL) approach for designing MOFs with the liquid phase epitaxy growth method, we demonstrate that it is possible to precisely control the epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures.

High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

2010 ◽  
Vol 159 ◽  
pp. 87-90
Author(s):  
M. Milanova ◽  
Roumen Kakanakov ◽  
G. Koleva ◽  
P. Vitanov ◽  
V. Bakardjieva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Al Content ◽  
Quaternary Compounds ◽  
Transmission Electron

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

Control of Water Content for Enhancing the Quality of Copper Paddle-Wheel-Based Metal–Organic Framework Thin Films Grown by Layer-by-Layer Liquid-Phase Epitaxy

2018 ◽  
Vol 18 (12) ◽  
pp. 7451-7459 ◽  
Author(s):  
Zheng Wang ◽  
Katia Rodewald ◽  
Raghavender Medishetty ◽  
Bernhard Rieger ◽  
Roland A. Fischer
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Water Content ◽  
Liquid Phase Epitaxy ◽  
Metal Organic Framework ◽  
Layer By Layer ◽  
Paddle Wheel ◽  
Metal Organic ◽  
Organic Framework

scholarly journals Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

1995 ◽  
Vol 66 (19) ◽  
pp. 2531-2533 ◽  
Author(s):  
Dong‐Keun Kim ◽  
Ju‐Heon Ahn ◽  
Byung‐Teak Lee ◽  
H. J. Lee ◽  
S. S. Cha ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Patterned Substrates ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Gaas Buffer Layer ◽  
Liquid Phase Epitaxial Growth

Vertical stress in liquid-phase epitaxy Si layers on SiO2/Si evaluated by X-ray double-crystal topography

1995 ◽  
Vol 28 (4A) ◽  
pp. A50-A55 ◽  
Author(s):  
R Kohler ◽  
B Jenichen ◽  
H Raidt ◽  
E Bauser ◽  
N Nagel
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Vertical Stress ◽  
Double Crystal ◽  
X Ray

scholarly journals X RAY DOUBLE CRYSTAL DIFFRACTION STUDY OF (BiTm)3(FeGa)5O12 MAGNETIC GARNET FILMS GROWN BY LIQUID PHASE EPITAXY

1989 ◽  
Vol 38 (10) ◽  
pp. 1704
Author(s):  
TIAN LIANG-GUANG ◽  
LIU XIANG-LIN ◽  
XU SHUN-SHENG ◽  
HAN XIAO-XI
Keyword(s):  
Liquid Phase ◽  
Diffraction Study ◽  
Liquid Phase Epitaxy ◽  
Double Crystal ◽  
X Ray ◽  
Garnet Films ◽  
Magnetic Garnet

X‐ray diffraction studies of the epitaxy ofa/b‐axes oriented YBa2Cu3O7−δfilms grown by liquid phase epitaxy

1994 ◽  
Vol 75 (10) ◽  
pp. 5243-5248 ◽  
Author(s):  
F. Sandiumenge ◽  
C. Dubs ◽  
P. Görnert ◽  
S. Galí
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray
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