High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

2010 ◽  
Vol 159 ◽  
pp. 87-90
Author(s):  
M. Milanova ◽  
Roumen Kakanakov ◽  
G. Koleva ◽  
P. Vitanov ◽  
V. Bakardjieva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Al Content ◽  
Quaternary Compounds ◽  
Transmission Electron

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

scholarly journals Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2236
Author(s):  
Arántzazu Núñez-Cascajero ◽  
Fernando B. Naranjo ◽  
María de la Mata ◽  
Sergio I. Molina
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Layer ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

scholarly journals Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography

CrystEngComm ◽  
2021 ◽  
Vol 23 (7) ◽  
pp. 1628-1633
Author(s):  
Jaemyung Kim ◽  
Okkyun Seo ◽  
L. S. R. Kumara ◽  
Toshihide Nabatame ◽  
Yasuo Koide ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

We demonstrate the crystal quality of a 6 inch (0001) plane free-standing GaN substrate grown using a Na-flux based liquid phase epitaxy method.

Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy

2005 ◽  
Vol 483-485 ◽  
pp. 295-298 ◽  
Author(s):  
Gabriel Ferro ◽  
D. Panknin ◽  
Efstathios K. Polychroniadis ◽  
Yves Monteil ◽  
Wolfgang Skorupa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Structural Characteristics ◽  
Microstructural Characterization ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Thin 3C-SiC films epitaxially grown on Si-substrate are substantially improved by the FLASIC process, which involves irradiation with flash lamps with pulse duration of 20ms. The disadvantages of the standard FLASIC process are the undulations introduced in the SiC film due to melting of the Si-substrate and the Si mass transport near the SiC/Si interface during the flash. An improved structure was realised in order to minimize the undulations of the SiC, improving also the quality of the film. This structure involves the deposition of a silicon overlayer (SOL) on the initial SiC layer, followed by an additional SiC capping layer acting as a source for SiC transfer by liquid phase epitaxy to the lower SiC layer. Significant mass SiC transport from the upper to the lower SiC layer through the SOL occurs during the flash. The new structure is characterized as inverse - FLASiC. The structural characteristics of the new structure were studied by transmission electron microscopy and atomic force microscopy.

STUDY OF Al0.065Ga0.935Sb AVALANCHE PHOTODETECTORS FOR 1.55 μm OF WAVELENGTH BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1741-1745 ◽  
Author(s):  
J. MARTÍNEZ-JUÁREZ ◽  
J. OLVERA ◽  
T. DÍAZ ◽  
F. DE ANDA ◽  
A. ESCOBOSA
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Liquid Phase Epitaxy ◽  
Donor Concentration ◽  
X Ray Diffraction ◽  
Avalanche Multiplication ◽  
X Ray ◽  
Avalanche Photodetectors

We report the results of a study of Al 0.065 Ga 0.935 Sb avalanche photodetectors grown on n-GaSb substrates. The devices have been fabricated from layers with the structure p-Al 0.13 Ga 0.87 Sb/n-Al 0.065 Ga 0.935 Sb:Te/n-GaSb (substrate) grown by liquid phase epitaxy (LPE) with a composition matched to detect light of 1.55 μm. The heterostructures were grown from Ga-rich solutions at 400°C. Just after their growth, the structures were subjected to baking processes inside the growth chamber. The baking time was varied and its influence on the breakdown voltages of the junctions was observed. Breakdown voltages up to 12 V, very low net donor concentration in the active layer (1E15 cm -3), and avalanche multiplication factors of around 50 have been obtained. The carrier concentration was determined by the C–V method. Photoluminescence and X-ray diffraction measurements were carried out to investigate the properties of the LPE-grown ternary layers, to determine the band gap and to estimate the quality of epitaxial layers. The photoresponses of the detectors are also presented.

Green Synthesis and Characterization of Hydroxyapatite from Fish Scale Biowaste

2014 ◽  
Vol 695 ◽  
pp. 235-238 ◽  
Author(s):  
Jamali Sukaimi ◽  
Sofiah Hamzah ◽  
Mohd Sabri Mohd Ghazali
Keyword(s):  
Electron Microscopy ◽  
Synthesis And Characterization ◽  
Fish Scale ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Different Temperatures ◽  
Scanning Electron

The present study was undertaken to study the effect of calcinate temperature on characteristics of hydroxyapatite synthesized from the fish scale (FHAp). The FHAp calcined at different temperatures starting from 100 up to 300 °C. The structures of FHAP were characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, and X-ray diffraction. The analytical results show that the FHAp quality increased as the calcin temperature increased. The FHAp displayed excellent characteristics in term of particle size, morphology and properties and crystalinity after calcined at 300 °C, FHAp 300. From this study, it founded that 300 °C is the lowest calcin temperature could be applied to synthesize high quality of HAp from fish scale biowaste.

Liquid Phase Epitaxy of Si1−xGex(O<×≲1) On Partially Masked Si-Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
H.-P. Trah ◽  
M.I. Alonso ◽  
M. Konuma ◽  
E. Bauser ◽  
H. Cerva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Seeded Growth ◽  
X Ray ◽  
Si Substrates ◽  
Lateral Overgrowth ◽  
Linear Dimensions ◽  
Transmission Electron ◽  
One Step

ABSTRACTSingle-crystal Si1−x Gex(O<×≲1) layers are grown by seeded growth on partially SiO2-masked Si-substrates, using a one-step liquid phase epitaxy (LPE) process. The seed regions are stripe- and hole-shaped windows in the oxide, having linear dimensions between 1.5 and 100 μm. The windows extend in different orientation on (111) and (100) orientated substrates. Lateral overgrowth over the oxide-masked areas is achieved up to 70 μm in <110>-directions. X-ray diffraction and Raman scattering show that the epitaxial islands are homogeneous and of excellent crystal quality. In the regions of lateral overgrowth the dislocation density is reduced considerably as shown by defect-etching and cross section transmission electron microscopy.

Preparation, Characterization of N-Ti-MCM-22 Molecular Sieve and its Photocatalytic Properties

2012 ◽  
Vol 602-604 ◽  
pp. 205-208
Author(s):  
Yue Cheng ◽  
Xiao Yuan Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Methylene Blue ◽  
High Pressure ◽  
Liquid Phase ◽  
Molecular Sieve ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Nanocrystalline N-doped and Ti-containing MCM-22 catalyst was synthesized by the static hydrothermal method, using sodium azide as nitrogen source for doping, and tetra-n-butyl titanate [Ti(OC4H9)4] as precursors of TiO2. The catalysts were characterized by X-ray diffraction, transmission electron microscopy, and energy-dispersive spectroscopy.During liquid phase photocatalytic degradation of methylene blue (MB) under high-pressure Hg arc lamp irradiation, the asprepared N-doped Ti-MCM-22 exhibited much higher activity than the undoped Ti-MCM-22, attributed to the effect of nitrogen dopant.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Detonation Synthesis of Nano-Size Materials

1995 ◽  
Vol 418 ◽  
Author(s):  
J. Forbes ◽  
J. Davis ◽  
C. Wong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Nucleation And Growth ◽  
Detonation Synthesis ◽  
X Ray Diffraction ◽  
Crystalline Materials ◽  
X Ray ◽  
Transmission Electron ◽  
Nano Size

AbstractThe detonation of explosives typically creates 100's of kbar pressures and 1000's K temperatures. These pressures and temperatures last for only a fraction of a microsecond as the products expand. Nucleation and growth of crystalline materials can occur under these conditions. Recovery of these materials is difficult but can occur in some circumstances. This paper describes the detonation synthesis facility, recovery of nano-size diamond, and plans to synthesize other nano-size materials by modifying the chemical composition of explosive compounds. The characterization of nano-size diamonds by transmission electron microscopy and electron diffraction, X-ray diffraction and Raman spectroscopy will also be reported.

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