Fluorographane: a promising material for bipolar doping of MoS2
2015 ◽
Vol 17
(41)
◽
pp. 27636-27641
◽
Keyword(s):
Using first principles calculations we show that one can realize vanishing n-type/p-type Schottky barrier heights when contacting MoS2 to fluorographane.
2007 ◽
Vol 4
(8)
◽
pp. 2972-2976
◽
2018 ◽
Vol 20
(38)
◽
pp. 24726-24734
◽
First-Principles Calculations of Schottky Barrier Heights of Monolayer Metal/6H-SiC{0001} Interfaces
2006 ◽
Vol 47
(11)
◽
pp. 2690-2695
◽
Keyword(s):
2006 ◽
Vol 47
(11)
◽
pp. 2696-2700
◽
Keyword(s):
1997 ◽
Vol 14
(6)
◽
pp. 460-463
◽