Hydroxyl functionalization improves the surface passivation of nanostructured silicon solar cells degraded by epitaxial regrowth

RSC Advances ◽  
2015 ◽  
Vol 5 (49) ◽  
pp. 39177-39181 ◽  
Author(s):  
Jae-Won Song ◽  
Yoon-Ho Nam ◽  
Min-Joon Park ◽  
Sun-Mi Shin ◽  
Ralf B. Wehrspohn ◽  
...  
Keyword(s):  
Solar Cells ◽  
Oxygen Plasma ◽  
Surface Passivation ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Nanostructured Silicon ◽  
Epitaxial Regrowth ◽  
Recombination Velocity

Nanoscale epitaxy of silicon is found to deteriorate the passivation performance by ALD-Al2O3in nanostructured solar cells. Hydroxyl functionalization by oxygen plasma decreased the surface recombination velocity.

Low effective back‐surface recombination velocity by boron implantation on 0.3‐Ω‐cmp‐type silicon solar cells

1988 ◽  
Vol 63 (9) ◽  
pp. 4683-4687 ◽  
Author(s):  
Leendert A. Verhoef ◽  
Albert Zondervan ◽  
Fredrik A. Lindholm ◽  
Mark B. Spitzer ◽  
Christopher J. Keavney
Keyword(s):  
Solar Cells ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Back Surface ◽  
Type Silicon ◽  
Boron Implantation ◽  
Recombination Velocity

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

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