Synthesis of 3-dimensional porous graphene nanosheets using electron cyclotron resonance plasma enhanced chemical vapour deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (103) ◽  
pp. 84927-84935 ◽  
Author(s):  
Rajesh Thomas ◽  
G. Mohan Rao
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Graphene Nanosheets ◽  
Chemical Vapour ◽  
Hydrogen Gas ◽  
3 Dimensional ◽  
Gas Molecules ◽  
Resonance Plasma

Microwave plasma driven chemical vapour deposition was used to synthesize graphene nanosheets from a mixture of acetylene and hydrogen gas molecules.

The Evolution of Properties with Deposition Time of Vertical Graphene Nanosheets Produced by Microwave Plasma-Enhanced Chemical Vapour Deposition

2021 ◽  
pp. 101529
Author(s):  
Erika Rajackaitė ◽  
Domantas Peckus ◽  
Rimantas Gudaitis ◽  
Tomas Tamulevičius ◽  
Šarūnas Meškinis ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Deposition Time ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Graphene Nanosheets ◽  
Chemical Vapour

Electron Cyclotron Resonance Plasma Chemical Vapour Deposition of Silicon Carbide Thin Films Using Ditertiary Butyl Selane

1994 ◽  
Vol 339 ◽  
Author(s):  
Mohamed Boumerzoug ◽  
Marcel Boudreau ◽  
Peter Mascher ◽  
Paul E. Jessop
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Plasma Chemical ◽  
Plasma Chemical Vapour Deposition ◽  
Resonance Plasma

ABSTRACTSilicon carbide films were deposited by electron cyclotron resonance plasma chemical vapour deposition, using Ditertiary Butyl Silane (SiH2(C4H9)2), a non-corrosive organic compound, liquid at room temperature and stable in air, as precursor. Depositions were carried out in an Ar/H2 plasma at relatively low temperatures, below 400 °C. The influence of deposition parameters such as substrate temperature, gas flow rates, pressure, and microwave power, was systematically investigated and related to the Si:C ratios and the refractive index. The film composition was measured by Auger electron spectroscopy and the surface morphology was examined by scanning electron microscopy. The deposition rates and refractive indexes were extracted from the conventional ellipsometric functions, psi and delta. The results show that high quality silicon carbide of variable Si:C ratios and with very low levels of impurities are obtained.

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