Composition dependence of phase structure and electrical properties of BiMnO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (77) ◽  
pp. 62713-62718 ◽  
Author(s):  
Peng Li ◽  
Wei Li ◽  
Jiwei Zhai ◽  
Bo Shen ◽  
Huarong Zeng ◽  
...  

Lead-free (1 − x)Bi0.5(Na0.8K0.2)0.5TiO3-xBiMnO3 (BNKT-xBMO, 0 < x < 0.025) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol–gel method, and the effects of BiMnO3 addition on the crystal structure and electrical properties were systematically investigated.

2018 ◽  
Vol 38 (4) ◽  
pp. 1450-1455 ◽  
Author(s):  
S. Abou Dargham ◽  
F. Ponchel ◽  
N. Abboud ◽  
M. Soueidan ◽  
A. Ferri ◽  
...  

2015 ◽  
Vol 76 (1) ◽  
pp. 220-226 ◽  
Author(s):  
Dongfang Chen ◽  
Shengli Huang ◽  
Jianguo Chen ◽  
Jinrong Cheng

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.


2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.


2014 ◽  
Vol 40 (1) ◽  
pp. 1919-1925 ◽  
Author(s):  
Guohua Dong ◽  
Guoqiang Tan ◽  
Wenlong Liu ◽  
Ao Xia ◽  
Huijun Ren

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