CuInSe2 thin film solar cells prepared by low-cost electrodeposition techniques from a non-aqueous bath

RSC Advances ◽  
2015 ◽  
Vol 5 (109) ◽  
pp. 89635-89643 ◽  
Author(s):  
Priyanka U. Londhe ◽  
Ashwini B. Rohom ◽  
Nandu B. Chaure
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Low Cost ◽  
Cell Structure ◽  
Power Conversion ◽  
Thin Film Solar Cells ◽  
Solar Cell Structure ◽  
Cuinse2 Thin Film

Highly crystalline and stoichiometric CIS thin films have been electrodeposited from non-aqueous bath at temperature 130 °C. Superstrate solar cell structure (FTO/CdS/CIS/Au) exhibited 4.5% power conversion efficiency.

Comparison of Light Trapping Limits Derived Using Various Methods for Thin Film GaAs Solar Cells

2020 ◽  
Vol 20 (6) ◽  
pp. 3939-3942
Author(s):  
Nikhil Deep Gupta
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Light Trapping ◽  
Cell Structure ◽  
Active Material ◽  
Thin Film Solar Cells ◽  
Maximum Efficiency ◽  
Solar Cell Structure ◽  
Limiting Values

The paper discusses and compares the Lambertian limits for light trapping (LT) in GaAs active layer based thin film solar cells as described by different mathematical theories and expressions. The Lambertian limits for thin film GaAs solar cell provide the maximum efficiency that can be achieved through LT structures and also indicate the advantage that these structure can provide for the design of GaAs thin film solar cell structure. The purpose to discuss difference Lambertian limit expressions is to understand and predict, which limiting benchmark value is more suited for nano LT structures based GaAs active material solar cells, considering GaAs material properties. The paper also compares these calculated limiting values with different nano LT structures including photonic crystal structures based designs proposed by the author. The aim is to check how much close a particular proposed structure is to the Lambertian values, so that we can predict that which is more suitable design to get best efficiency out of the single junction GaAs material based structure. The paper discussed the three Lambertian theories including that of Yablonovitch, Green and Schuster.

Silicon Parallel Multilayer Thin Film Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
Martin A. Green ◽  
Alistair B. Sproul ◽  
Tom Puzzer ◽  
Guang Fu Zheng ◽  
Paul Basore ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Cell Structure ◽  
Energy Conversion Efficiency ◽  
Thin Film Solar Cells ◽  
Multilayer Thin Film ◽  
Solar Cell Structure ◽  
Cell Energy

AbstractA new silicon parallel multilayer solar cell structure has recently been reported which can give high solar cell energy conversion efficiency from low quality silicon material. Advantages of this structure are described as is recent characterization work which compares the properties of grain boundaries in experimental devices to those predicted by earlier calculations.

scholarly journals Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off

2022 ◽  
Vol 12 (2) ◽  
pp. 820
Author(s):  
Seungwan Woo ◽  
Geunhwan Ryu ◽  
Taesoo Kim ◽  
Namgi Hong ◽  
Jae-Hoon Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Large Scale ◽  
Low Cost ◽  
Cell Structure ◽  
Thin Film Solar Cells ◽  
Threading Dislocation ◽  
Si Substrate ◽  
Lift Off

We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 × 107 cm−2 was achieved via two In0.1Ga0.9As strained insertion layers and 6× thermal cycle annealing. An inverted p-on-n GaAs solar cell structure grown on the GaAs/Si virtual substrate showed homogenous photoluminescence peak intensities throughout the 2″ wafer. We show a 10.6% efficient GaAs thin film solar cell without anti-reflection coatings and compare it to nominally identical upright structure solar cells grown on GaAs and Si. This work paves the way for large-scale and low-cost wafer-bonded III-V multi-junction solar cells.

Efficiency Enhancement by Optimizing Selenization Time for Co-Sputtered Cu2ZnSn(S,Se)4 Thin Film Solar Cells

2019 ◽  
Vol 793 ◽  
pp. 35-39
Author(s):  
Luan Hong Sun ◽  
Hong Lie Shen ◽  
Hu Lin Huang ◽  
Hui Rong Shang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Thin Film Solar Cells ◽  
Efficiency Enhancement ◽  
Diffraction Angle

To reveal the effects of annealing condition on CZTSSe thin film solar cells, co-sputtering and subsequent selenization were used to prepare CZTSSe thin films. Structural, morphological and optical properties of CZTSSe thin films were investigated. CZTSSe thin films with various Se/(S+Se) ratio ranging from 0.69-0.78 were obtained. Representative peaks corresponding to CZTSSe in XRD and Raman results showed a slight shift to lower diffraction angle and wavenumbers. Selenization time significantly influenced the morphologies of CZTSSe films and the gradual grown up grain size was observed. VOCdeficit values down to 839 mV was achieved for the best cell. CZTSSe solar cell with the selenization time of 10 min showed a best conversion efficiency of 5.32%, which presented a 50% enhancement comparing to the solar cells with insufficient and over-selenized absorbers.

scholarly journals First-principles calculation on electronic properties of Bismuth-halide inorganic perovskites for solar cell

2021 ◽  
Vol 01 (01) ◽  
pp. 56-57
Author(s):  
Galhenage A. Sewvandi ◽  
◽  
J.T.S.T. Jayawardane ◽  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Photovoltaic Effect ◽  
Power Conversion ◽  
Thin Film Solar Cells ◽  
Halide Perovskite ◽  
Lead Halide

Solar energy is a commonly used alternate source of energy and it can be utilized based on the principle of the photovoltaic effect. The photovoltaic effect converts sun energy into electrical energy using photovoltaic devices (solar cells). A solar cell device should have high efficiency and a long lifetime to be commercially beneficial. Presently, silicon and thin-film solar cells are widely employed. The crystalline solar cells are more efficient but they are also expensive. Thin-film solar cells are formed by placing one or more thin layers of photovoltaic materials on different substrates. Although these cells have a lower cost, they are also less efficient compared to Si-based solar cells. Organic-inorganic hybrid lead halide perovskite solar cells are one of the most promising low-cost power conversion efficiency technologies that could exceed the 26% threshold. However, the lack of environmental stability and of high lead toxicity are the main bottlenecks that impede the future industrialization and commercialization hybrid lead halide perovskite. Hence It is important to achieve high power conversion efficiency while also maintaining stability and non-toxicity in the development of new lead-free perovskite materials.

scholarly journals Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 87 ◽  
Author(s):  
Yunyan Zhang ◽  
Huiyun Liu
Keyword(s):  
Thin Film ◽  
Energy Source ◽  
Solar Cells ◽  
Solar Cell ◽  
Solar Energy ◽  
High Efficiency ◽  
Low Cost ◽  
Thin Film Solar Cells ◽  
Solar Photovoltaics ◽  
The Cost

Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.

scholarly journals Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1209 ◽  
Author(s):  
Sara Kim ◽  
Nam-Hoon Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Absorption Coefficient ◽  
Low Cost ◽  
Thin Film Solar Cells ◽  
Volatile Components ◽  
Impurity Phases ◽  
Sputtering Power ◽  
Earth Abundant

When there is a choice of materials for an application, particular emphasis should be given to the development of those that are low-cost, nontoxic, and Earth-abundant. Chalcostibite CuSbSe2 has gained attention as a potential absorber material for thin-film solar cells, since it exhibits a high absorption coefficient. In this study, CuSbSe2 thin films were deposited by radio frequency magnetron cosputtering with CuSe2 and Sb targets. A series of CuSbxSe2 thin films were prepared with different Sb contents adjusted by sputtering power, followed by rapid thermal annealing. Impurity phases and surface morphology of Cu–Sb–Se systems were directly affected by the Sb sputtering power, with the formation of volatile components. The crystallinity of the CuSbSe2 thin films was also enhanced in the near-stoichiometric system at an Sb sputtering power of 15 W, and considerable degradation in crystallinity occurred with a slight increase over 19 W. Resistivity, carrier mobility, and carrier concentration of the near-stoichiometric thin film were 14.4 Ω-cm, 3.27 cm2/V∙s, and 1.33 × 1017 cm−3, respectively. The optical band gap and absorption coefficient under the same conditions were 1.7 eV and 1.75 × 105 cm−1, which are acceptable for highly efficient thin-film solar cells.

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