Organic–inorganic hybrid CH3NH3PbI3 perovskite materials as channels in thin-film field-effect transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16243-16249 ◽  
Author(s):  
Yuxiang Wu ◽  
Juan Li ◽  
Jian Xu ◽  
Yangyang Du ◽  
Like Huang ◽  
...  

We proposed a new kind of TFT using organic–inorganic hybrid perovskite CH3NH3PbI3 material as the semiconducting channel.

2018 ◽  
Vol 124 (9) ◽  
Author(s):  
Linlin Tang ◽  
Yuze Peng ◽  
Zhou Zhou ◽  
Yuxiang Wu ◽  
Jian Xu ◽  
...  

2021 ◽  
Vol 119 (18) ◽  
pp. 183303
Author(s):  
Yuchen Zhou ◽  
Nikhil Tiwale ◽  
Yifan Yin ◽  
Ashwanth Subramanian ◽  
Miriam H. Rafailovich ◽  
...  

2019 ◽  
Vol 7 (14) ◽  
pp. 4004-4012 ◽  
Author(s):  
Fan Zhang ◽  
Huaye Zhang ◽  
Lijie Zhu ◽  
Liang Qin ◽  
Yue Wang ◽  
...  

High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.


2018 ◽  
Vol 6 (15) ◽  
pp. 3945-3950 ◽  
Author(s):  
Lijie Zhu ◽  
Huaye Zhang ◽  
Qipeng Lu ◽  
Yue Wang ◽  
Zhenbo Deng ◽  
...  

The (PEA)2PbX4(PEA = C8H9NH3, X = Cl, Br, I) nanosheets: P3HT composite films were prepared as channel layers for high performance field-effect transistors.


2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  

2005 ◽  
Vol 127 (8) ◽  
pp. 2406-2407 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Gary D. Jaycox ◽  
Zhigang Li ◽  
...  

2021 ◽  
Vol 9 ◽  
Author(s):  
Inhee Maeng ◽  
Hiroshi Tanaka ◽  
Valynn Katrine Mag-usara ◽  
Makoto Nakajima ◽  
Masakazu Nakamura ◽  
...  

All mixed hybrid perovskite (MA(Sn, Pb)(Br,I)3) thin film was fabricated by sequential vacuum evaporation method. To optimize the first layer with PbBr2 and SnI2, we performed different annealing treatments. Further, MA(Sn, Pb)(Br, I)3 thin film was synthesized on the optimized first layer by evaporating MAI and post-annealing. The formed hybrid perovskite thin film exhibited absorptions at 1.0 and 1.7 THz with small absorbance (<10%). Moreover, no chemical and structural defect-incorporated absorption was found. In this study, the possibility of changing terahertz absorption frequency through the mixture of metal cations (Sn+ and Pb+) and halogen anions (Br− and I−) was verified.


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