Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics

The (PEA)2PbX4(PEA = C8H9NH3, X = Cl, Br, I) nanosheets: P3HT composite films were prepared as channel layers for high performance field-effect transistors.

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Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

Polymer Chemistry ◽

10.1039/c5py00757g ◽

2015 ◽

Vol 6 (32) ◽

pp. 5884-5890 ◽

Cited By ~ 18

Author(s):

Shengxia Li ◽

Linrun Feng ◽

Jiaqing Zhao ◽

Xiaojun Guo ◽

Qing Zhang

Keyword(s):

Low Temperature ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Cross Linking ◽

Organic Field Effect Transistors ◽

Solution Processed ◽

High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

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High-performance organic–inorganic hybrid perovskite thin-film field-effect transistors

Applied Physics A ◽

10.1007/s00339-018-2049-8 ◽

2018 ◽

Vol 124 (9) ◽

Cited By ~ 7

Author(s):

Linlin Tang ◽

Yuze Peng ◽

Zhou Zhou ◽

Yuxiang Wu ◽

Jian Xu ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Inorganic Hybrid ◽

Hybrid Perovskite

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High-Performance Damascene-Gate Thin Film Transistors

MRS Proceedings ◽

10.1557/proc-557-695 ◽

1999 ◽

Vol 557 ◽

Cited By ~ 1

Author(s):

Eugene Ma ◽

Sigurd Wagner

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Linear Region ◽

Threshold Voltages ◽

Bottom Gate

AbstractWe report a novel TFT structure where the gate metal is embedded into a SiNx passivation layer. This allows the subsequent gate dielectric layer to be much thinner than in conventional bottom-gate structures. thereby reducing the threshold voltage and the sub-threshold slope. TFTs employing these damascene-gate structures were fabricated with SiNX gate dielectrics as thin as 50 nm. Such devices exhibit threshold voltages of 0.9 V, sub-threshold slopes of 0.1 V/dec, ION/IOFF current ratios of 106 and linear region field-effect mobilities of 0.6 cm2/Vs.

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Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

RSC Advances ◽

10.1039/c8ra09831j ◽

2019 ◽

Vol 9 (6) ◽

pp. 3169-3175 ◽

Cited By ~ 2

Author(s):

Han Sol Back ◽

Min Je Kim ◽

Jeong Ju Baek ◽

Do Hwan Kim ◽

Gyojic Shin ◽

...

Keyword(s):

Dielectric Layer ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Logic Gates ◽

Organic Field Effect Transistors ◽

High Quality ◽

Complementary Inverters

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters.

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Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽

10.1515/nanoph-2020-0401 ◽

2020 ◽

Vol 9 (16) ◽

pp. 4719-4728

Author(s):

Tao Deng ◽

Shasha Li ◽

Yuning Li ◽

Yang Zhang ◽

Jingye Sun ◽

...

Keyword(s):

Molybdenum Disulfide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Three Dimensional ◽

Polarized Light ◽

Optical Field ◽

Two Dimensional ◽

Polarization Ratio ◽

Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

Essays in Biochemistry ◽

10.1042/ebc20150009 ◽

2016 ◽

Vol 60 (1) ◽

pp. 81-90 ◽

Cited By ~ 45

Author(s):

Vivek Pachauri ◽

Sven Ingebrandt

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Label Free ◽

Biomolecular Detection ◽

New Device ◽

Label Free Detection ◽

History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

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