Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors

Science ◽  
1999 ◽  
Vol 286 (5441) ◽  
pp. 945-947 ◽  
Author(s):  
C. R. Kagan
Keyword(s):  
Thin Film ◽  
Hybrid Materials ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Inorganic Hybrid

High-performance organic–inorganic hybrid perovskite thin-film field-effect transistors

2018 ◽  
Vol 124 (9) ◽  
Author(s):  
Linlin Tang ◽  
Yuze Peng ◽  
Zhou Zhou ◽  
Yuxiang Wu ◽  
Jian Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite

Organic–inorganic hybrid CH3NH3PbI3 perovskite materials as channels in thin-film field-effect transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16243-16249 ◽  
Author(s):  
Yuxiang Wu ◽  
Juan Li ◽  
Jian Xu ◽  
Yangyang Du ◽  
Like Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Inorganic Hybrid ◽  
Perovskite Materials ◽  
Hybrid Perovskite

We proposed a new kind of TFT using organic–inorganic hybrid perovskite CH3NH3PbI3 material as the semiconducting channel.

scholarly journals DNA adsorption measured with ultra-thin film organic field effect transistors

2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dna Adsorption ◽  
Ultra Thin Film

High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors

2005 ◽  
Vol 127 (8) ◽  
pp. 2406-2407 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Gary D. Jaycox ◽  
Zhigang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Thin Film

Azafullerene (C59N)2 thin-film field-effect transistors

2004 ◽  
Vol 84 (12) ◽  
pp. 2154-2156 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Hirotaka Ohashi ◽  
Nikos Tagmatarchis ◽  
Haruhito Kato ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability

2016 ◽  
Vol 9 (1) ◽  
pp. 573-584 ◽  
Author(s):  
Abhishek S. Dahiya ◽  
Charles Opoku ◽  
Guylaine Poulin-Vittrant ◽  
Nicolas Camara ◽  
Christophe Daumont ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Operational Stability ◽  
Inorganic Hybrid

scholarly journals Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3423 ◽  
Author(s):  
Junhee Cho ◽  
Seongkwon Hwang ◽  
Doo-Hyun Ko ◽  
Seungjun Chung
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Spray Pyrolysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Spray Pyrolysis Technique ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Process Conditions

Solution-based metal oxide semiconductors (MOSs) have emerged, with their potential for low-cost and low-temperature processability preserving their intrinsic properties of high optical transparency and high carrier mobility. In particular, MOS field-effect transistors (FETs) using the spray pyrolysis technique have drawn huge attention with the electrical performances compatible with those of vacuum-based FETs. However, further intensive investigations are still desirable, associated with the processing optimization and operational instabilities when compared to other methodologies for depositing thin-film semiconductors. Here, we demonstrate high-performing transparent ZnO FETs using the spray pyrolysis technique, exhibiting a field-effect mobility of ~14.7 cm2 V−1 s−1, an on/off ratio of ~109, and an SS of ~0.49 V/decade. We examine the optical and electrical characteristics of the prepared ZnO films formed by spray pyrolysis via various analysis techniques. The influence of spray process conditions was also studied for realizing high quality ZnO films. Furthermore, we measure and analyze time dependence of the threshold voltage (Vth) shifts and their recovery behaviors under prolonged positive and negative gate bias, which were expected to be attributed to defect creation and charge trapping at or near the interface between channel and insulator, respectively.

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