scholarly journals Mechanisms of charge accumulation in the dark operation of perovskite solar cells

2016 ◽  
Vol 18 (22) ◽  
pp. 14970-14975 ◽  
Author(s):  
Teresa S. Ripolles ◽  
Ajay K. Baranwal ◽  
Koji Nishinaka ◽  
Yuhei Ogomi ◽  
Germà Garcia-Belmonte ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dark Current ◽  
Forward Bias ◽  
Perovskite Solar Cells ◽  
Charge Accumulation ◽  
Current Voltage

In this work, a new current peak at forward bias in the dark current–voltage curves has been identified for standard mesoscopic perovskite solar cells.

Contactless and Spatially‐Resolved Determination of Current‐Voltage Curves in Perovskite Solar Cells via Photoluminescence

Solar RRL ◽  
2021 ◽  
Author(s):  
Anh Dinh Bui ◽  
Md Arafat Mahmud ◽  
Naeimeh Mozaffari ◽  
Rabin Basnet ◽  
The Duong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Spatially Resolved ◽  
Current Voltage

scholarly journals Elucidating the Impact of Charge Selective Contact in Halide Perovskite Through Impedance Spectroscopy

2019 ◽  
Author(s):  
Mohd Taukeer Khan ◽  
Manuel Salado ◽  
Abdullah R. D. Almohammedi ◽  
Samrana Kazim ◽  
Shahzada Ahmad
Keyword(s):  
Solar Cells ◽  
Impedance Spectroscopy ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Charge Carrier Mobility ◽  
Charge Accumulation ◽  
Frequency Dependent ◽  
The Impact

<p>The electron and hole selective contact (SC) play a pivotal role in the performance of perovskite solar cells. In order to separate the interfacial phenomenon from bulk, the influence of charge SC was elucidated, by means of impedance spectroscopy. The specific role played by TiO<sub>2</sub> and <i>Spiro-OMeTAD</i> as electron and hole SC in perovskite solar cells was investigated at short circuit condition at different temperatures. We have probed MAPbI<sub>3</sub> and (FAPbI<sub>3</sub>)<sub>0.85</sub>(MAPbBr<sub>3</sub>)<sub>0.15 </sub>and elucidated parameters such as charge carrier mobility, recombination resistance, time constant and charge carrier kinetics in perovskite layer and at the interface of perovskite/SC. Charge carrier mobility in mixed perovskite was found to be nearly two order of magnitude higher as compared to MAPbI<sub>3</sub>. Moreover, the carrier mobility in devices with only electron SC was found to be higher as compared only hole SC. The charge accumulation at TiO<sub>2</sub>/perovskite/<i>Spiro</i>-OMeTAD interfaces were studied via frequency dependent capacitance, revealing higher charge accumulation at perovskite/S<i>piro</i>-OMeTAD than at TiO<sub>2</sub>/perovskite interface. By performing varying temperature frequency dependent capacitance measurements the distribution of density of state within the bandgap of the perovskites, the emission rate of electrons from the trap states and traps activation energy was determined. </p>

Successive surface engineering of TiO2 compact layers via dual modification of fullerene derivatives affording hysteresis-suppressed high-performance perovskite solar cells

2017 ◽  
Vol 5 (4) ◽  
pp. 1724-1733 ◽  
Author(s):  
Weiran Zhou ◽  
Jieming Zhen ◽  
Qing Liu ◽  
Zhimin Fang ◽  
Dan Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Surface Engineering ◽  
Perovskite Solar Cells ◽  
Engineering Method ◽  
Voltage Response ◽  
Efficiency Enhancement ◽  
Compact Layer ◽  
Fullerene Derivatives ◽  
Current Voltage

A new successive surface engineering method via a dual modification of TiO2 compact layer by PC61BM and C60-ETA was developed, affording dramatic efficiency enhancement with suppressed-hysteresis current–voltage response.

Correlating hysteresis phenomena with interfacial charge accumulation in perovskite solar cells

2020 ◽  
Vol 22 (1) ◽  
pp. 245-251 ◽  
Author(s):  
Tianyang Chen ◽  
Zhe Sun ◽  
Mao Liang ◽  
Song Xue
Keyword(s):  
Solar Cells ◽  
Charge Exchange ◽  
Perovskite Solar Cells ◽  
Exchange Model ◽  
Diffusion Equations ◽  
Charge Accumulation ◽  
Drift Diffusion ◽  
Charge Extraction ◽  
Interfacial Charge ◽  
Hysteresis Phenomena

A generalized charge exchange model is introduced into drift–diffusion equations for modeling the charge extraction in perovskite solar cells.

scholarly journals Measurement and modelling of dark current decay transients in perovskite solar cells

2017 ◽  
Vol 5 (2) ◽  
pp. 452-462 ◽  
Author(s):  
Simon E. J. O'Kane ◽  
Giles Richardson ◽  
Adam Pockett ◽  
Ralf G. Niemann ◽  
James M. Cave ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Dark Current ◽  
Perovskite Solar Cells ◽  
Sudden Change ◽  
Perovskite Solar Cell ◽  
Applied Bias ◽  
Current Decay

The current decay in response to a sudden change of applied bias up to 1 V has been measured on a methylammonium lead triiodide perovskite solar cell, for temperatures between 258 and 308 K.

Elecrically Detected Magnetic Resonance in A-SI:H Pin Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
Klaus Lips ◽  
Walther Fuhs
Keyword(s):  
Solar Cells ◽  
Magnetic Resonance ◽  
Dark Current ◽  
Defect Density ◽  
Light Exposure ◽  
Forward Bias ◽  
Internal Field ◽  
Exciting Light ◽  
Applied Bias ◽  
Forward Current

We report on a detailed study of EDMR in pin-type solar cells. Like in films the signals are dominated by the contribution of the e-db resonance. It is found that the spectra depend on the applied bias and photon energy of the exciting light. The data suggest that the dark current is controlled by recombination in the bulk of the i-layer. The sign of the signal depends sensitively on the sign of the internal field. At high forward bias and illumination recombination at the pi-interface plays an important role. Degradation by both light exposure and high forward current results predominantly from an increase of the bulk defect density.

Influence of Nickel Film Thicknesses on Dark Current-Voltage Characteristics of Silicon Solar Cells

2011 ◽  
Vol 694 ◽  
pp. 672-675
Author(s):  
Tao Li ◽  
Chun Lan Zhou ◽  
Zhen Gang Liu ◽  
Wen Jing Wang ◽  
Yang Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dark Current ◽  
Nickel Silicide ◽  
Nickel Film ◽  
Silicon Solar Cells ◽  
Voltage Range ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Current Voltage Characteristics

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.

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