Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98337-98343 ◽  
Author(s):  
Felix Mattelaer ◽  
Tom Bosserez ◽  
Jan Rongé ◽  
Johan A. Martens ◽  
Jolien Dendooven ◽  
...  

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.

2006 ◽  
Vol 496 (2) ◽  
pp. 346-352 ◽  
Author(s):  
Jenni Harjuoja ◽  
Anne Kosola ◽  
Matti Putkonen ◽  
Lauri Niinistö

2018 ◽  
Vol 9 ◽  
pp. 17-27 ◽  
Author(s):  
Miika Mattinen ◽  
Peter J. King ◽  
Leonid Khriachtchev ◽  
Mikko J. Heikkilä ◽  
Ben Fleming ◽  
...  

2021 ◽  
Vol 7 (2) ◽  
pp. 2000819 ◽  
Author(s):  
Dong Gun Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
Haengha Seo ◽  
Tae Kyun Kim ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


2005 ◽  
Vol 44 (4B) ◽  
pp. 2230-2234 ◽  
Author(s):  
Hag-Ju Cho ◽  
Hye Lan Lee ◽  
Hong Bae Park ◽  
Taek Soo Jeon ◽  
Seong Geon Park ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.


2013 ◽  
Vol 117 (10) ◽  
pp. 4931-4936 ◽  
Author(s):  
Nicholas C. Strandwitz ◽  
David J. Comstock ◽  
Ronald L. Grimm ◽  
Adam C. Nichols-Nielander ◽  
Jeffrey Elam ◽  
...  

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