Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

2006 ◽  
Vol 496 (2) ◽  
pp. 346-352 ◽  
Author(s):  
Jenni Harjuoja ◽  
Anne Kosola ◽  
Matti Putkonen ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98337-98343 ◽  
Author(s):  
Felix Mattelaer ◽  
Tom Bosserez ◽  
Jan Rongé ◽  
Johan A. Martens ◽  
Jolien Dendooven ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Manganese Oxide ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Solar Hydrogen ◽  
Layer Deposition ◽  
Thin Film Catalysts ◽  
Post Deposition

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.

scholarly journals Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing

2018 ◽  
Vol 9 ◽  
pp. 17-27 ◽  
Author(s):  
Miika Mattinen ◽  
Peter J. King ◽  
Leonid Khriachtchev ◽  
Mikko J. Heikkilä ◽  
Ben Fleming ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Molybdenum Oxide ◽  
Atomic Layer ◽  
Phase Control ◽  
Oxide Thin Films ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

Trap Reduction through O 3 Post‐Deposition Treatment of Y 2 O 3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates

2021 ◽  
Vol 7 (2) ◽  
pp. 2000819 ◽  
Author(s):  
Dong Gun Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
Haengha Seo ◽  
Tae Kyun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Post Deposition

Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition

2005 ◽  
Vol 44 (4B) ◽  
pp. 2230-2234 ◽  
Author(s):  
Hag-Ju Cho ◽  
Hye Lan Lee ◽  
Hong Bae Park ◽  
Taek Soo Jeon ◽  
Seong Geon Park ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

Interval Annealing During Alternating Pulse Deposition

2004 ◽  
Vol 811 ◽  
Author(s):  
J.F. Conley ◽  
D.J. Tweet ◽  
Y. Ono ◽  
G. Stecker
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Bulk Material ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Equivalent Thickness ◽  
Layer Deposition ◽  
Pulse Deposition ◽  
Post Deposition

AbstractThin films deposited via atomic layer deposition at low temperature tend to be less dense than bulk material and typically require high temperature post deposition annealing for densification and removal of unreacted precursor ligands. We have found that improved film densification can be achieved by interval annealing, in which in-situ moderate temperature (∼420°C) rapid thermal anneals are performed after every n deposition cycles. HfO2 film density and refractive index were found to increase with decreasing anneal interval (more frequent annealing). The highest density films could be achieved only by every-cycle annealing and could not be achieved by post deposition annealing. The densified every cycle annealed films have been shown to have improved equivalent thickness and leakage and decreased interfacial layer thickness.

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