Metal‐Insulator Transitions in Stable V 2 O 3 Thin Films: Atomic Layer Deposition and Post‐Deposition Annealing Studies

Author(s):  
Krishnappa Manjunath ◽  
Reetendra Singh ◽  
Debendra Prasad Panda ◽  
Chintamani Nagesa Ramachandra Rao
2006 ◽  
Vol 496 (2) ◽  
pp. 346-352 ◽  
Author(s):  
Jenni Harjuoja ◽  
Anne Kosola ◽  
Matti Putkonen ◽  
Lauri Niinistö

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98337-98343 ◽  
Author(s):  
Felix Mattelaer ◽  
Tom Bosserez ◽  
Jan Rongé ◽  
Johan A. Martens ◽  
Jolien Dendooven ◽  
...  

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.


2018 ◽  
Vol 9 ◽  
pp. 17-27 ◽  
Author(s):  
Miika Mattinen ◽  
Peter J. King ◽  
Leonid Khriachtchev ◽  
Mikko J. Heikkilä ◽  
Ben Fleming ◽  
...  

2021 ◽  
Vol 7 (2) ◽  
pp. 2000819 ◽  
Author(s):  
Dong Gun Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
Haengha Seo ◽  
Tae Kyun Kim ◽  
...  

2020 ◽  
Vol 8 (36) ◽  
pp. 12662-12668
Author(s):  
Henrik H. Sønsteby ◽  
Erik Skaar ◽  
Jon E. Bratvold ◽  
John W. Freeland ◽  
Angel Yanguas-Gil ◽  
...  

Cu-Substitution in LaNiO3 by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.


2005 ◽  
Vol 44 (4B) ◽  
pp. 2230-2234 ◽  
Author(s):  
Hag-Ju Cho ◽  
Hye Lan Lee ◽  
Hong Bae Park ◽  
Taek Soo Jeon ◽  
Seong Geon Park ◽  
...  

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