Trap Reduction through O
            3
            Post‐Deposition Treatment of Y
            2
            O
            3
            Thin Films Grown by Atomic Layer Deposition on Ge Substrates

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.

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Metal‐Insulator Transitions in Stable V 2 O 3 Thin Films: Atomic Layer Deposition and Post‐Deposition Annealing Studies

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.202000565 ◽

2021 ◽

Author(s):

Krishnappa Manjunath ◽

Reetendra Singh ◽

Debendra Prasad Panda ◽

Chintamani Nagesa Ramachandra Rao

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Post Deposition Annealing ◽

Metal Insulator ◽

Layer Deposition ◽

Post Deposition

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Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2011.07.124 ◽

2011 ◽

Vol 258 (1) ◽

pp. 604-607 ◽

Cited By ~ 23

Author(s):

Yung-Chen Cheng

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Atomic Layer ◽

Zno Thin Films ◽

Layer Deposition ◽

Doped Zno ◽

Post Deposition

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Atomic layer deposition of quaternary oxide (La,Sr)CoO3−δ thin films

Dalton Transactions ◽

10.1039/c5dt00436e ◽

2015 ◽

Vol 44 (17) ◽

pp. 8001-8006 ◽

Cited By ~ 22

Author(s):

E. Ahvenniemi ◽

M. Matvejeff ◽

M. Karppinen

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Perovskite Structure ◽

Composition Range ◽

Atomic Layer ◽

Wide Composition Range ◽

Layer Deposition ◽

New Process ◽

Post Deposition

An atomic layer deposition (ALD) process has been developed to fabricate quaternary oxide (La,Sr)CoO3 thin films in a well-controlled manner within a wide composition range. A post-deposition treatment crystallizes the films in a perovskite structure. The new process has true potential to be employed in future applications like IT-SOFCs.

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Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing

Materials Today Chemistry ◽

10.1016/j.mtchem.2018.04.005 ◽

2018 ◽

Vol 9 ◽

pp. 17-27 ◽

Cited By ~ 13

Author(s):

Miika Mattinen ◽

Peter J. King ◽

Leonid Khriachtchev ◽

Mikko J. Heikkilä ◽

Ben Fleming ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Molybdenum Oxide ◽

Atomic Layer ◽

Phase Control ◽

Oxide Thin Films ◽

Post Deposition Annealing ◽

Layer Deposition ◽

Post Deposition

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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