scholarly journals Термоэлектрические свойства нанокомпозитного Bi-=SUB=-0.45-=/SUB=-Sb-=SUB=-1.55-=/SUB=-Te-=SUB=-2.985-=/SUB=- с микрочастицами SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (6) ◽  
pp. 751
Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Wide Temperature Range ◽  
Figure Of Merit ◽  
Nanostructured Material ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
P Type

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.

Improving the Thermoelectric Properties of the Material and Increasing the Efficiency of Conversion Processes

2021 ◽  
Vol 23 (5) ◽  
pp. 243-246
Author(s):  
D.G. Mustafaeva ◽  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Mean Free Path ◽  
Charge Carriers ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
Phonon Component

The area of practical application of thermoelectric materials depends on the value of the thermoelectric figure of merit. The use of semiconductor materials makes it possible to realize the conditions under which the ratio of their parameters ensures the achievement of high values of thermoelectric figure of merit. The achievement of the maximum thermoelectric figure of merit causes an increase in the efficiency of conversion processes due to the improvement of the thermoelectric properties of the material. The position of the maximum value of the thermoelectric figure of merit is predetermined by the scattering parameters and the ratio of the mobilities and effective masses of charge carriers. The nature of the change in electrical conductivity is determined by the behavior of the concentration of charge carriers. Thermal conductivity, like electrical conductivity, is proportional to the concentration of electrons and the mean free path. An increase in thermoelectric efficiency is achieved by optimizing thermoelectric parameters by doping and improving the properties of com¬pounds, which leads to an optimization of the concentration of charge carriers, a change in the density of states, and a decrease in the phonon component of thermal conductivity. The improvement of the thermoelectric properties of the material and the increase in the efficiency of the conversion processes are provided at a certain concentration of charge carriers, which corresponds to the optimal value.

Thermoelectric Properties of Ni Doped P-Type BiCuSeO Oxyselenides

2014 ◽  
Vol 602-603 ◽  
pp. 906-909 ◽  
Author(s):  
Yao Chun Liu ◽  
Jun Fu Liu ◽  
Bo Ping Zhang ◽  
Yuan Hua Lin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Layer Structure ◽  
Thermoelectric Figure Of Merit ◽  
Ni Doping ◽  
Thermoelectric Figure ◽  
P Type

We report on the effect of Ni doping on the thermoelectric properties of p-type BiCuSeO oxyselenide, with layer structure composed of conductive (Cu2Se2)2-layers alternately stacked with insulating (Bi2O2)2+layers along c axis. After doping with Ni, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to a power factor of ~231 μwm-1K-2at 873 K. Coupled to low thermal conductivity, ZT at 873 K is increased from 0.35 for pristine BiCuSeO to 0.39 for Bi0.95Ni0.05CuSeO. However, the efficiency of Ni doping in the insulating (Bi2O2)2+layer is low, and this doping only leads to a limited increase of the hole carriers concentration. Therefore Ni doped BiCuSeO has relatively low electrical conductivity which makes its thermoelectric figure of merit much lower than that of Ca, Sr, Ba and Pb doped BiCuSeO.

scholarly journals Термоэлектрические свойства твердых растворов (CuInSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)-=SUB=-x-=/SUB=-

2022 ◽  
Vol 56 (1) ◽  
pp. 38
Author(s):  
Ч.И. Абилов ◽  
М.Ш. Гасанова ◽  
Н.Т. Гусейнова ◽  
Э.К. Касумова
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Charge Carriers ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Thermoelectric Coefficient

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.

Thermal Conductivity of Zn4−xCdxSb3 Solid Solutions

1997 ◽  
Vol 478 ◽  
Author(s):  
T. Caillat ◽  
A. Borshchevsky ◽  
J. -P. Fleurial
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
State Of The Art ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Jet Propulsion ◽  
P Type ◽  
Electrical Conductors

Abstractβ-Zn4Sb3 was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy β-Zn4Sb3 with isostructural compounds because of the expected decrease in lattice thermal conductivity. We have grown Zn4−xCdxSb3 crystals with 0.2≤x<1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn4−xCdxSb3 alloys are significantly lower than those measured for β-Zn4Sb3 and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

Thermoelectric Properties of a Wide–Gap Chalcopyrite Compound AgInSe2

2012 ◽  
Vol 519 ◽  
pp. 188-192 ◽  
Author(s):  
P.Z. Ying ◽  
H. Zhou ◽  
Y.L. Gao ◽  
Y.Y. Li ◽  
Y.P. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Chemical Compositions ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Remarkable Improvement ◽  
Wide Gap ◽  
Chalcopyrite Compound

Here we report the thermoelectric properties of a wide–gap chalcopyrite compound AgInSe2, and observed the remarkable improvement in electrical conductivity σ, due to the bandgap (Eg = 1.12 eV) reduction compared to In2Se3. The improvement in σ is directly responsible for the enhancement of thermoelectric figure of merit ZT, though the thermal conductivity is much higher at 500 ~ 724 K. The maximum ZT value is 0.34 at 724 K, increasing by a factor of 4, indicating that this chalcopyrite compound is of a potential thermoelectric candidate if further optimizations of chemical compositions and structure are made.

Synthesis and Thermoelectric Properties of WO3/Cu2SnSe3 Composites

2018 ◽  
Vol 913 ◽  
pp. 811-817 ◽  
Author(s):  
Di Wu ◽  
Ji Ai Ning ◽  
De Gang Zhao ◽  
Xue Zhen Wang ◽  
Na Liu
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Figure Of Merit ◽  
Milling Process ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Spark Plasma

In this study, nanometer WO3 powder was uniformly dispersed into the Cu2SnSe3 powder by ball milling process, and the WO3/Cu2SnSe3 thermoelectric composite was prepared by spark plasma sintering (SPS). The results showed that the nano-WO3 particles were mainly distributed in the grain boundary of Cu2SnSe3 matrix, and the grain growth of Cu2SnSe3 was inhibited. The addition of nano-WO3 could enhance the electrical conductivity of Cu2SnSe3, and while the Seebeck coefficient increased slightly for the 0.4% WO3/Cu2SnSe3 composite. The thermal conductivity was not decreased until the content of WO3 exceeded 1.6%. The highest thermoelectric figure of merit ZT of 0.177 was achieved at 700 K for 0.4% WO3/Cu2SnSe3 composite. The enhancement of ZT value of WO3/Cu2SnSe3 thermoelectric material was mainly attributed to the improvement of the electrical properties.

scholarly journals The impact of charge transfer and structural disorder on the thermoelectric properties of cobalt intercalated TiS2

2016 ◽  
Vol 4 (9) ◽  
pp. 1871-1880 ◽  
Author(s):  
Gabin Guélou ◽  
Paz Vaqueiro ◽  
Jesús Prado-Gonjal ◽  
Tristan Barbier ◽  
Sylvie Hébert ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Charge Transfer ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Structural Disorder ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Low Levels ◽  
The Impact

The thermoelectric figure of merit of TiS2 is increased by 25% through the intercalation of low levels of cobalt due to an increased electrical conductivity, arising from charge transfer, and a reduced thermal conductivity resulting from disorder.

Ultralow thermal conductivity and high thermoelectric figure of merit in mixed valence In5X5Br (X = S, and Se) compounds

2020 ◽  
Vol 8 (27) ◽  
pp. 13812-13819 ◽  
Author(s):  
Tribhuwan Pandey ◽  
Arun S. Nissimagoudar ◽  
Avanish Mishra ◽  
Abhishek K. Singh
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Figure Of Merit ◽  
Mixed Valence ◽  
Thermoelectric Figure Of Merit ◽  
High Electrical Conductivity ◽  
Thermoelectric Figure ◽  
Low Thermal Conductivity ◽  
Indium Compounds

We predict that mixed valent indium compounds exhibit a combination of high electrical conductivity, high thermopower, and low thermal conductivity, resulting in a large thermoelectric figure of merit.

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