scholarly journals A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13092-13096 ◽  
Author(s):  
Ming-Ming Fan ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Self Powered

Realization of Ag/ZnMgO/ZnO photodetectors provides a feasible route to develop self-powered solar-blind UV photodetectors with fast response speed.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

Self-powered solar-blind ZnGa2O4 UV photodetector with ultra-fast response speed

2020 ◽  
Vol 315 ◽  
pp. 112354 ◽  
Author(s):  
Dongyang Han ◽  
Kewei Liu ◽  
Qichao Hou ◽  
Xing Chen ◽  
Jialin Yang ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Solar Blind ◽  
Self Powered

High sensitivity and fast response self-powered solar-blind ultraviolet photodetector with a β-Ga2O3/spiro-MeOTAD p–n heterojunction

2020 ◽  
Vol 8 (13) ◽  
pp. 4502-4509 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Zeng Liu ◽  
Yusong Zhi ◽  
Jie Dai ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Inorganic P ◽  
Solar Blind ◽  
Self Powered

A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

scholarly journals Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  
Keyword(s):  
Response Times ◽  
Nanowire Array ◽  
Graphene Film ◽  
Fast Response ◽  
Nanowire Arrays ◽  
Monolayer Graphene ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Decay Times ◽  
First Time

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

scholarly journals Self-powered, high response and fast response speed metal–insulator–semiconductor structured photodetector based on 2D MoS2

RSC Advances ◽  
2018 ◽  
Vol 8 (49) ◽  
pp. 28041-28047 ◽  
Author(s):  
Xinxin Liu ◽  
Feng Li ◽  
Minxuan Xu ◽  
Junjie Qi
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
High Response ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Response Recovery ◽  
Self Powered

A MIS structured self-powered photodetector of Pd/HfO2/MoS2 was fabricated by inserting a thin insulator, which has a fast response/recovery speed.

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