High sensitivity and fast response self-powered solar-blind ultraviolet photodetector with a β-Ga2O3/spiro-MeOTAD p–n heterojunction

2020 ◽  
Vol 8 (13) ◽  
pp. 4502-4509 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Zeng Liu ◽  
Yusong Zhi ◽  
Jie Dai ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Inorganic P ◽  
Solar Blind ◽  
Self Powered

A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Specific Detectivity ◽  
Self Powered

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

Self-powered solar-blind ZnGa2O4 UV photodetector with ultra-fast response speed

2020 ◽  
Vol 315 ◽  
pp. 112354 ◽  
Author(s):  
Dongyang Han ◽  
Kewei Liu ◽  
Qichao Hou ◽  
Xing Chen ◽  
Jialin Yang ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Solar Blind ◽  
Self Powered

A self-powered ultraviolet photodetector based on TiO2/Ag/ZnS nanotubes with high stability and fast response

2020 ◽  
Vol 8 (4) ◽  
pp. 1353-1358 ◽  
Author(s):  
Xiang Li ◽  
Shiyong Gao ◽  
Guangning Wang ◽  
Zhikun Xu ◽  
Shujie Jiao ◽  
...  
Keyword(s):  
Ag Nanoparticles ◽  
High Stability ◽  
Room Temperature ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Self Powered

Ag nanoparticles were deposited onto TiO2 nanotubes and a ZnS layer was further fabricated on the surface of the TiO2/Ag nanotubes at room temperature to form a self-powered UV photodetector.

Reinforcement of Double Built-In Electric Fields in Spiro-MeOTAD/Ga2O3/Si p-i-n Structure for High Sensitivity Solar-blind UV Photovoltaic Detector

2021 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Jianying Yue ◽  
Xueqiang Ji ◽  
Zeng Liu ◽  
...  
Keyword(s):  
Electric Fields ◽  
High Sensitivity ◽  
Uv Photodetector ◽  
Ga2o3 Film ◽  
Solar Blind ◽  
Self Powered ◽  
P Type ◽  
Photovoltaic Detector

Novel p-i-n self-powered solar-blind UV photodetector based on p-type spiro-MeOTAD (spiro), Ga2O3, and n-type Si is fabricated. The p-type spiro film is spin-coated on the surface of Ga2O3 film deposited...

scholarly journals A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13092-13096 ◽  
Author(s):  
Ming-Ming Fan ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Self Powered

Realization of Ag/ZnMgO/ZnO photodetectors provides a feasible route to develop self-powered solar-blind UV photodetectors with fast response speed.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

scholarly journals A Self-Powered Nanogenerator for the Electrical Protection of Integrated Circuits from Trace Amounts of Liquid

2019 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhuang Hui ◽  
Ming Xiao ◽  
Daozhi Shen ◽  
Jiayun Feng ◽  
Peng Peng ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Printed Circuit Board ◽  
Short Circuit ◽  
High Sensitivity ◽  
Short Circuit Current ◽  
Fast Response ◽  
Open Circuit ◽  
Circuit Board ◽  
Self Powered

Abstract With the increase in the use of electronic devices in many different environments, a need has arisen for an easily implemented method for the rapid, sensitive detection of liquids in the vicinity of electronic components. In this work, a high-performance power generator that combines carbon nanoparticles and TiO2 nanowires has been fabricated by sequential electrophoretic deposition (EPD). The open-circuit voltage and short-circuit current of a single generator are found to exceed 0.7 V and 100 μA when 6 μL of water was applied. The generator is also found to have a stable and reproducible response to other liquids. An output voltage of 0.3 V was obtained after 244, 876, 931, and 184 μs, on exposure of the generator to 6 μL of water, ethanol, acetone, and methanol, respectively. The fast response time and high sensitivity to liquids show that the device has great potential for the detection of small quantities of liquid. In addition, the simple easily implemented sequential EPD method ensures the high mechanical strength of the device. This compact, reliable device provides a new method for the sensitive, rapid detection of extraneous liquids before they can impact the performance of electronic circuits, particularly those on printed circuit board.

scholarly journals Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  
Keyword(s):  
Response Times ◽  
Nanowire Array ◽  
Graphene Film ◽  
Fast Response ◽  
Nanowire Arrays ◽  
Monolayer Graphene ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Decay Times ◽  
First Time

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

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