High quality β-Ga2O3 film grown with N2O for high sensitivity solar-blind-ultraviolet photodetector with fast response speed

2018 ◽  
Vol 735 ◽  
pp. 150-154 ◽  
Author(s):  
D. Zhang ◽  
W. Zheng ◽  
R.C. Lin ◽  
T.T. Li ◽  
Z.J. Zhang ◽  
...  
2020 ◽  
Vol 8 (13) ◽  
pp. 4502-4509 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Zeng Liu ◽  
Yusong Zhi ◽  
Jie Dai ◽  
...  

A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.


RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13092-13096 ◽  
Author(s):  
Ming-Ming Fan ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  

Realization of Ag/ZnMgO/ZnO photodetectors provides a feasible route to develop self-powered solar-blind UV photodetectors with fast response speed.


Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 648
Author(s):  
Aijie Liang ◽  
Jingyuan Ming ◽  
Wenguo Zhu ◽  
Heyuan Guan ◽  
Xinyang Han ◽  
...  

Breath monitoring is significant in assessing human body conditions, such as cardiac and pulmonary symptoms. Optical fiber-based sensors have attracted much attention since they are immune to electromagnetic radiation, thus are safe for patients. Here, a microfiber (MF) humidity sensor is fabricated by coating tin disulfide (SnS2) nanosheets onto the surface of MF. The small diameter (~8 μm) and the long length (~5 mm) of the MF promise strong interaction between guiding light and SnS2. Thus, a small variation in the relative humidity (RH) will lead to a large change in optical transmitted power. A high RH sensitivity of 0.57 dB/%RH is therefore achieved. The response and recovery times are estimated to be 0.08 and 0.28 s, respectively. The high sensitivity and fast response speed enable our SnS2-MF sensor to monitor human breath in real time.


Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.


2021 ◽  
Vol 123 ◽  
pp. 105532
Author(s):  
Xu Cao ◽  
Yanhui Xing ◽  
Jun Han ◽  
Junshuai Li ◽  
Tao He ◽  
...  

2020 ◽  
Vol 10 (5) ◽  
pp. 629-633
Author(s):  
Yong Wang ◽  
Naisen Yu

In this paper, visible-blind ultraviolet (UV) detectors based on a ZnS/p-GaN heterojunction structure were fabricated. The heterojunction structure was composed of a ZnS nanostructure deposited on a p-GaN/sapphire substrate. The ZnS nanostructured component was obtained via radio-frequency magnetron sputtering. The device based on this ZnS/p-GaN heterojunction structure showed a reproducible, stable, and fast response speed. Therefore, the results demonstrated that the ZnS/p-GaN heterojunction was successfully fabricated using this relatively low-cost method.


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