Epitaxial growth of two-dimensional SnSe2/MoS2 misfit heterostructures

2016 ◽  
Vol 4 (43) ◽  
pp. 10215-10222 ◽  
Author(s):  
Mei Zhao ◽  
Manman Liu ◽  
Youqing Dong ◽  
Chao Zou ◽  
Keqin Yang ◽  
...  

van der Waals (vdWs) heterostructures, obtained by vertically stacking two-dimensional layered materials upon each other, appear particularly promising for future atomically thin electronic and optoelectronic devices and attract a great deal of attention due to their diverse functionalities.

Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...


2020 ◽  
Vol 22 (4) ◽  
pp. 2122-2129 ◽  
Author(s):  
Yawen Li ◽  
Yuanhui Sun ◽  
Guangren Na ◽  
Wissam A. Saidi ◽  
Lijun Zhang

The two-dimensional (2D) atomically thin layered materials have attracted significant attention for constructing next-generation integrated electronic and optoelectronic devices.


2019 ◽  
Vol 115 (14) ◽  
pp. 141601 ◽  
Author(s):  
Haifei Wu ◽  
Jiahao Tang ◽  
Qifeng Liang ◽  
Biyun Shi ◽  
Yixiao Niu ◽  
...  

Author(s):  
Hongcheng Ruan ◽  
Yu Huang ◽  
Yuqian Chen ◽  
Fuwei Zhuge

Two-dimensional (2D) materials are attracting explosive attention for their intriguing potential in versatile applications, covering optoelectronics, electronics, sensors, etc. An attractive merit of 2D materials is their viable van der Waals (VdW) stacking in artificial sequence, thus forming different atomic arrangements in vertical direction and enabling unprecedented tailoring of material properties and device application. In this chapter, we summarize the latest progress in assembling VdW heterostructures for optoelectronic applications by beginning with the basic pick-transfer method for assembling 2D materials and then discussing the different combination of 2D materials of semiconductor, conductor, and insulator properties for various optoelectronic devices, e.g., photodiode, phototransistors, optical memories, etc.


2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.


2019 ◽  
Vol 4 (5) ◽  
pp. 1113-1123 ◽  
Author(s):  
Yinglu Jia ◽  
Min Zhao ◽  
Gaoyang Gou ◽  
Xiao Cheng Zeng ◽  
Ju Li

A new group of two-dimensional layered materials with intrinsic ferroelectricity and antiferroelectricity are identified through first-principles calculations.


2019 ◽  
Vol 31 (12) ◽  
pp. 4524-4535 ◽  
Author(s):  
Yi Hu ◽  
Zheng-Hang Qi ◽  
Jingyu Lu ◽  
Renpeng Chen ◽  
Mingzhi Zou ◽  
...  

2021 ◽  
Author(s):  
Yilv Guo ◽  
Yehui Zhang ◽  
Zhaobo Zhou ◽  
Xiwen Zhang ◽  
Bing Wang ◽  
...  

Two-dimensional (2D) van der Waals (vdW) engineering has brought about many extraordinary new physics and potential applications. Herein, we propose a new type of spin-constraint optoelectronic devices, implemented in 2D...


ACS Nano ◽  
2015 ◽  
Vol 9 (8) ◽  
pp. 8078-8088 ◽  
Author(s):  
Xufan Li ◽  
Leonardo Basile ◽  
Bing Huang ◽  
Cheng Ma ◽  
Jaekwang Lee ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13309-13317 ◽  
Author(s):  
Wei Gao ◽  
Zhaoqiang Zheng ◽  
Yongtao Li ◽  
Yu Zhao ◽  
Liang Xu ◽  
...  

In recent years, with the rapid development of transfer technologies related to graphene and other two-dimensional layered materials (2DLMs), graphene sandwiched 2DLMs have been confirmed to be outstanding tunneling and optoelectronic devices.


Sign in / Sign up

Export Citation Format

Share Document