Diverse electronic properties of 2D layered Se-containing materials composed of quasi-1D atomic chains

2020 ◽  
Vol 22 (4) ◽  
pp. 2122-2129 ◽  
Author(s):  
Yawen Li ◽  
Yuanhui Sun ◽  
Guangren Na ◽  
Wissam A. Saidi ◽  
Lijun Zhang
Keyword(s):  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Layered Materials ◽  
Two Dimensional ◽  
Next Generation ◽  
Atomic Chains ◽  
Significant Attention

The two-dimensional (2D) atomically thin layered materials have attracted significant attention for constructing next-generation integrated electronic and optoelectronic devices.

Omnipotent phosphorene: a next-generation, two-dimensional nanoplatform for multidisciplinary biomedical applications

2018 ◽  
Vol 47 (15) ◽  
pp. 5588-5601 ◽  
Author(s):  
Meng Qiu ◽  
Wen Xiu Ren ◽  
Taeho Jeong ◽  
Miae Won ◽  
Geun Young Park ◽  
...  
Keyword(s):  
Biomedical Applications ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
Next Generation ◽  
2D Material ◽  
Significant Attention

Phosphorene, also known as single- or few-layer black phosphorus (FLBP), is a new member of the two-dimensional (2D) material family and has attracted significant attention in recent years for bio-applications.

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Graphene Sheet ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

n- and p-type ohmic contacts at monolayer gallium nitride–metal interfaces

2018 ◽  
Vol 20 (37) ◽  
pp. 24239-24249 ◽  
Author(s):  
Ying Guo ◽  
Feng Pan ◽  
Yajie Ren ◽  
Binbin Yao ◽  
Chuanghua Yang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Ohmic Contacts ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Next Generation ◽  
Metal Interfaces ◽  
P Type

Recently, two-dimensional (2D) gallium nitride (GaN) was experimentally fabricated, and has promising applications in next-generation electronic and optoelectronic devices.

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

RSC Advances ◽  
2015 ◽  
Vol 5 (23) ◽  
pp. 17572-17581 ◽  
Author(s):  
Hongsheng Liu ◽  
Nannan Han ◽  
Jijun Zhao
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Insight Into

Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices.

Study the Catalyst Effect of NaCl on MoS2 Growth in Chemical Vapor Deposition Process

CrystEngComm ◽  
2021 ◽  
Author(s):  
Long Chen ◽  
Lingyu Zang ◽  
Luhua Chen ◽  
Jinchao Wu ◽  
Chengming Jiang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Characteristics ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Two Dimensional ◽  
Next Generation ◽  
Cvd Growth ◽  
Catalyst Effect

Due to the unique two-dimensional (2D) structural characteristics, the mono-layer MoS2 is considered to be an ideal material for next-generation optoelectronic devices. At present, the chemical vapor deposition (CVD) growth...

High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism

Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13309-13317 ◽  
Author(s):  
Wei Gao ◽  
Zhaoqiang Zheng ◽  
Yongtao Li ◽  
Yu Zhao ◽  
Liang Xu ◽  
...  
Keyword(s):  
High Performance ◽  
Rapid Development ◽  
Optoelectronic Devices ◽  
Layered Materials ◽  
Two Dimensional

In recent years, with the rapid development of transfer technologies related to graphene and other two-dimensional layered materials (2DLMs), graphene sandwiched 2DLMs have been confirmed to be outstanding tunneling and optoelectronic devices.

scholarly journals Optical and Electronic Properties of Two-Dimensional Layered Materials

Nanophotonics ◽  
2017 ◽  
Vol 6 (2) ◽  
pp. 479-493 ◽  
Author(s):  
Marco Bernardi ◽  
Can Ataca ◽  
Maurizia Palummo ◽  
Jeffrey C. Grossman
Keyword(s):  
Electronic Properties ◽  
Layered Materials ◽  
Two Dimensional ◽  
Optical And Electronic Properties

scholarly journals Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures

2021 ◽  
Vol 9 ◽  
Author(s):  
Wenjun Xiao ◽  
Tianyun Liu ◽  
Yuefei Zhang ◽  
Zhen Zhong ◽  
Xinwei Zhang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
First Principles ◽  
Schottky Barrier Height ◽  
Optoelectronic Devices ◽  
Strain Condition ◽  
Two Dimensional ◽  
Photoelectric Device ◽  
Horizontal Strain ◽  
P Type

With a direct bandgap, two-dimensional (2D) ZnSe is a promising semiconductor material in photoelectric device fields. In this work, based on first-principles methods, we theoretically studied the modulation of the Schottky barrier height (SBH) by applying horizontal and vertical strains on graphene/ZnSe heterojunction. The results show that the inherent electronic properties of graphene and ZnSe monolayers are both well-conserved because of the weak van der Waals (vdW) forces between two sublayers. Under horizontal strain condition, the n(p)-type SBH decreases from 0.56 (1.62) eV to 0.21 (0.78) eV. By changing the interlayer distance in the range of 2.8 Å to 4.4 Å, the n(p)-type SBH decreases (increases) from 0.88 (0.98) eV to 0.21 (1.76) eV. These findings prove the SBH of the heterojunction to be tuned effectively, which is of great significance to optoelectronic devices, especially in graphene/ZnSe-based nano-electronic and optoelectronic devices.

Epitaxial growth of two-dimensional SnSe2/MoS2 misfit heterostructures

2016 ◽  
Vol 4 (43) ◽  
pp. 10215-10222 ◽  
Author(s):  
Mei Zhao ◽  
Manman Liu ◽  
Youqing Dong ◽  
Chao Zou ◽  
Keqin Yang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Layered Materials ◽  
Two Dimensional

van der Waals (vdWs) heterostructures, obtained by vertically stacking two-dimensional layered materials upon each other, appear particularly promising for future atomically thin electronic and optoelectronic devices and attract a great deal of attention due to their diverse functionalities.

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