A super flexible and custom-shaped graphene heater

Nanoscale ◽  
2017 ◽  
Vol 9 (38) ◽  
pp. 14357-14363 ◽  
Author(s):  
Tian-Yu Zhang ◽  
Hai-Ming Zhao ◽  
Dan-Yang Wang ◽  
Qian Wang ◽  
Yu Pang ◽  
...  

In this paper, we fabricate a graphene film heater through laser reduction on graphene oxide, which is a two-step process.

2020 ◽  
Vol 217 (11) ◽  
pp. 2070038
Author(s):  
Afonso Gabriel dos Anjos Júnior ◽  
Gabriel Pimenta de Freitas Cardoso ◽  
Leonardo Giordano Paterno ◽  
Artemis Marti Ceschin

2020 ◽  
Vol 217 (11) ◽  
pp. 1901046
Author(s):  
Afonso Gabriel dos Anjos Júnior ◽  
Gabriel Pimenta de Freitas Cardoso ◽  
Leonardo Giordano Paterno ◽  
Artemis Marti Ceschin

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1428
Author(s):  
Xiaowei Fan ◽  
Xuguo Huai ◽  
Jie Wang ◽  
Li-Chao Jing ◽  
Tao Wang ◽  
...  

Graphene film has wide applications in optoelectronic and photovoltaic devices. A novel and facile method was reported for the reduction of graphene oxide (GO) film by electron transfer and nascent hydrogen produced between aluminum (Al) film deposited by magnetron sputtering and hydrochloric acid (HCl) solution for only 5 min, significantly shorter than by other chemical reduction methods. The thickness of Al film was controlled utilizing a metal detection sensor. The effect of the thickness of Al film and the concentration of HCl solution during the reduction was explored. The optimal thickness of Al film was obtained by UV-Vis spectroscopy and electrical conductivity measurement of reduced GO film. Atomic force microscope images could show the continuous film clearly, which resulted from the overlap of GO flakes, the film had a relatively flat surface morphology, and the surface roughness reduced from 7.68 to 3.13 nm after the Al reduction. The film sheet resistance can be obviously reduced, and it reached 9.38 kΩ/sq with a high transmittance of 80% (at 550 nm). The mechanism of the GO film reduction by electron transfer and nascent hydrogen during the procedure was also proposed and analyzed.


2021 ◽  
pp. 2001191
Author(s):  
Zhengfen Wan ◽  
Shujun Wang ◽  
Ben Haylock ◽  
Zhiqing Wu ◽  
Tuan‐Khoa Nguyen ◽  
...  

2021 ◽  
Vol 7 (2) ◽  
pp. 48
Author(s):  
Vittorio Scardaci ◽  
Giuseppe Compagnini

Laser scribing has been proposed as a fast and easy tool to reduce graphene oxide (GO) for a wide range of applications. Here, we investigate laser reduction of GO under a range of processing and material parameters, such as laser scan speed, number of laser passes, and material coverage. We use Raman spectroscopy for the characterization of the obtained materials. We demonstrate that laser scan speed is the most influential parameter, as a slower scan speed yields poor GO reduction. The number of laser passes is influential where the material coverage is higher, producing a significant improvement of GO reduction on a second pass. Material coverage is the least influential parameter, as it affects GO reduction only under restricted conditions.


Author(s):  
Do Thi Thuy

Graphene film electrodes have many important applications, but the fabriacion of these electrodes is difficult dues to the poor processing of graphene. This article describes the preliminary results of using 3D printing technology to fabricate thin-film electrodes from graphene oxide inks. Graphene oxide ink is synthesized by chemical method. The graphene oxide (GO) and reduction graphene oxide (r GO) thin film were chacracterized by filed scanning electron microscopy (FESEM) and Energy-dispersive X-ray spectrocopy (EDX spectrocopy) to make sure the morphological and optical characteristics of the thin film. In addition, the electrochemical aera active studies were also determined by cyclic voltametry (CV) curves. The r GO thin film displays higher electrochemical area active in comparison with GO, which is 2.56 cm2 compare to 0.31 cm2, indicating the best result for the superior conductivity of thin film electrode.


2021 ◽  
Author(s):  
Nikita D. Orekhov ◽  
Julia Bondareva ◽  
Denis O. Potapov ◽  
Pavel V. Dyakonov ◽  
Oleg N. Dubinin ◽  
...  

2020 ◽  
Vol 117 (16) ◽  
pp. 8727-8735 ◽  
Author(s):  
Tianzhu Zhou ◽  
Hong Ni ◽  
Yanlei Wang ◽  
Chao Wu ◽  
Hao Zhang ◽  
...  

Graphene-based films with high toughness have many promising applications, especially for flexible energy storage and portable electrical devices. Achieving such high-toughness films, however, remains a challenge. The conventional mechanisms for improving toughness are crack arrest or plastic deformation. Herein we demonstrate black phosphorus (BP) functionalized graphene films with record toughness by combining crack arrest and plastic deformation. The formation of covalent bonding P-O-C between BP and graphene oxide (GO) nanosheets not only reduces the voids of GO film but also improves the alignment degree of GO nanosheets, resulting in high compactness of the GO film. After further chemical reduction and π-π stacking interactions by conjugated molecules, the alignment degree of rGO nanosheets was further improved, and the voids in lamellar graphene film were also further reduced. Then, the compactness of the resultant graphene films and the alignment degree of reduced graphene oxide nanosheets are further improved. The toughness of the graphene film reaches as high as ∼51.8 MJ m−3, the highest recorded to date. In situ Raman spectra and molecular dynamics simulations reveal that the record toughness is due to synergistic interactions of lubrication of BP nanosheets, P-O-C covalent bonding, and π-π stacking interactions in the resultant graphene films. Our tough black phosphorus functionalized graphene films with high tensile strength and excellent conductivity also exhibit high ambient stability and electromagnetic shielding performance. Furthermore, a supercapacitor based on the tough films demonstrated high performance and remarkable flexibility.


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