scholarly journals Resistivity and piezoelectric properties of Ca3TaGa1.5Al1.5Si2O14 single crystals for high temperature sensors

RSC Advances ◽  
2017 ◽  
Vol 7 (89) ◽  
pp. 56697-56703 ◽  
Author(s):  
Xiuwei Fu ◽  
Encarnación G. Víllora ◽  
Yoshitaka Matsushita ◽  
Yuuki Kitanaka ◽  
Yuji Noguchi ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Temperature Sensor ◽  
Piezoelectric Properties ◽  
Temperature Sensors ◽  
High Quality ◽  
Sensor Applications ◽  
High Temperature Sensor

A high quality CTGAS single crystal with excellent properties for high temperature sensor applications.

Growth and Characterization of Ca2Al2SiO7Piezoelectric Single Crystals for High-Temperature Sensor Applications

2013 ◽  
Vol 52 (9S1) ◽  
pp. 09KD03 ◽  
Author(s):  
Manabu Hagiwara ◽  
Hiroaki Noguchi ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Shinobu Fujihara ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Temperature Sensor ◽  
Sensor Applications ◽  
High Temperature Sensor

YAG:YSZ composites as potential thermographic phosphors for high temperature sensor applications

2009 ◽  
Vol 136 (1) ◽  
pp. 52-59 ◽  
Author(s):  
S.J. Skinner ◽  
J.P. Feist ◽  
I.J.E. Brooks ◽  
S. Seefeldt ◽  
A.L. Heyes
Keyword(s):  
High Temperature ◽  
Temperature Sensor ◽  
Sensor Applications ◽  
Thermographic Phosphors ◽  
High Temperature Sensor

Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications

2011 ◽  
Vol 679-680 ◽  
pp. 449-452 ◽  
Author(s):  
Walter Daves ◽  
A. Krauss ◽  
Martin Le-Huu ◽  
S. Kronmüller ◽  
Volker Haeublein ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Electrical Properties ◽  
Comparative Study ◽  
Temperature Sensor ◽  
Passivation Layer ◽  
Sensor Applications ◽  
High Temperature Anneal ◽  
Passivation Layers ◽  
High Temperature Sensor

We investigated the performance of different metallization/passivation systems for high temperature applications. The metallizations comprised a 150 nm sputtered Pt or a 150 nm e-beam evaporated PtRh layer on Ti/TiN underlayers, respectively. The passivation coatings consisted of amorphous PECVD SiOx, of amorphous stress-reduced PECVD SiNy, and of a SiOx/ SiNy stack. For samples with SiOx and SiOx/ SiNy passivation layers the electrical properties changed after a short high temperature anneal at 600 °C but then remained stable during further annealing. This was attributed to the formation of PtTi alloys, which stabilized the metallization stack. In samples with SiNy passivation a significant Pt out-diffusion into the passivation layer was observed. This led to a degradation of the electrical and mechanical properties. The best performance was achieved with Pt-based metallizations and SiOx or SiOx/SiNy passivations.

Sign in / Sign up

Export Citation Format

Share Document