Anti-solvent dependent device performance in CH3NH3PbI3 solar cells: the role of intermediate phase content in the as-prepared thin films

Our work highlights the intrinsic role of an intermediate phase in controlling the film quality of a solution processed organic–inorganic hybrid CH3NH3PbI3.

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Impact of Delay Time before Annealing MAI-PbI2-DMSO Intermediate Phase on Perovskite Film Quality and Photo-Physical Properties

Crystals ◽

10.3390/cryst9030151 ◽

2019 ◽

Vol 9 (3) ◽

pp. 151 ◽

Cited By ~ 3

Author(s):

Yujun Yao ◽

Xiaoping Zou ◽

Jin Cheng ◽

Dan Chen ◽

Chuangchuang Chang ◽

...

Keyword(s):

Solar Cells ◽

Physical Properties ◽

Delay Time ◽

High Performance ◽

Intermediate Phase ◽

Perovskite Solar Cells ◽

Device Performance ◽

Perovskite Layer ◽

The Impact

High-performance perovskite solar cells are strongly dependent on the quality of the perovskite layer. Two-step sequential deposition of CH3NH3PbI3 (MAPbI3) films is widely used to fabricate perovskite solar cells and many factors influence the quality of perovskite films, such as the delay time before annealing the MAI-PbI2-DMSO intermediate phase, which would impact the morphology and photo-physical properties of perovskite thin films. Here, the experimental research indicates that the impact of the delay time before annealing the MAI-PbI2-DMSO intermediate phase on the quality, crystallinity, and photo-physical properties of perovskite film is crucial. During the delay process, the delay time before annealing the MAI-PbI2-DMSO intermediate phase plays an important role in the nucleation process of perovskite grains inside the intermediate phase. With the extension of the delay time before annealing, the quality of the perovskite film deteriorates, thus the photo-physical properties change. We found that after the localized liquid–liquid diffusion of MAI and PbI2, with the extension of the delay time before annealing the MAI-PbI2-DMSO intermediate phase, the nucleation number of the perovskite grains increases and the grain size becomes smaller. Therefore, with the extension of the delay time before annealing, the device performance deteriorates.

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On the role of solution-processed bathocuproine in high-efficiency inverted perovskite solar cells

Solar Energy ◽

10.1016/j.solener.2021.02.047 ◽

2021 ◽

Vol 218 ◽

pp. 142-149

Author(s):

Shou-En Chiang ◽

Anjali Chandel ◽

Diksha Thakur ◽

Yan-Ta Chen ◽

Pei-Chen Lin ◽

...

Keyword(s):

Solar Cells ◽

High Efficiency ◽

Perovskite Solar Cells ◽

Solution Processed

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Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

MRS Proceedings ◽

10.1557/proc-763-b8.8 ◽

2003 ◽

Vol 763 ◽

Cited By ~ 4

Author(s):

U. Rau ◽

M. Turcu

Keyword(s):

Thin Films ◽

Surface Layer ◽

Solar Cells ◽

Fermi Level ◽

Band Gap ◽

Photovoltaic Performance ◽

Heterojunction Solar Cells ◽

Fermi Level Pinning ◽

Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

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