Self-catalyzed VLS growth of PbSe wires with significant suppression of the VS process

CrystEngComm ◽  
2018 ◽  
Vol 20 (35) ◽  
pp. 5269-5274 ◽  
Author(s):  
Chao Fan ◽  
Xing Xu ◽  
Yushuang Zhang ◽  
Tianren Chen ◽  
Songyang Wang ◽  
...  
Keyword(s):  
Infrared Emission ◽  
Significant Suppression ◽  
High Quality ◽  
Mid Infrared ◽  
Controllable Growth ◽  
Vls Growth

Controllable growth of high-quality PbSe wires with strong mid-infrared emission was achieved with significant suppression of the vapor–solid-grown cubes.

Broadband mid-infrared emission in Dy3+/Er3+ co-doped tellurite glass

2021 ◽  
Vol 236 ◽  
pp. 118078
Author(s):  
Yu Zhang ◽  
Lizhang Xia ◽  
Xinjie Shen ◽  
Jun Li ◽  
Gaobo Yang ◽  
...  
Keyword(s):  
Tellurite Glass ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Co Doped

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Mid-infrared emission properties and energy transfer evaluation in Tm3+ doped fluorophosphate glasses

2015 ◽  
Vol 162 ◽  
pp. 58-62 ◽  
Author(s):  
Rubing Li ◽  
Cong Tian ◽  
Ying Tian ◽  
Tao Wei ◽  
Bingpeng Li ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Emission Properties

scholarly journals Far- and mid-infrared emission and reflectivity of orthorhombic and cubic ErMnO3 : Polarons and bipolarons

2018 ◽  
Vol 98 (18) ◽  
Author(s):  
Néstor E. Massa ◽  
Leire del Campo ◽  
Karsten Holldack ◽  
Vinh Ta Phuoc ◽  
Patrick Echegut ◽  
...  
Keyword(s):  
Infrared Emission ◽  
Mid Infrared

Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission

2016 ◽  
Vol 109 (12) ◽  
pp. 122102 ◽  
Author(s):  
Y. Gu ◽  
Y. G. Zhang ◽  
X. Y. Chen ◽  
Y. J. Ma ◽  
S. P. Xi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Quantum Well Structures

Intersubband mid-infrared emission in optically pumped quantum wells

1996 ◽  
Vol 19 (1) ◽  
pp. 69-79 ◽  
Author(s):  
F.H. Julien ◽  
Z. Moussa ◽  
P. Boucaud ◽  
Y. Lavon ◽  
A. Sa'ar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Emission ◽  
Optically Pumped ◽  
Mid Infrared

scholarly journals A MULTIWAVELENGTH STUDY OF YOUNG MASSIVE STAR-FORMING REGIONS. III. MID-INFRARED EMISSION

2009 ◽  
Vol 698 (1) ◽  
pp. 488-501 ◽  
Author(s):  
Esteban F. E. Morales ◽  
Diego Mardones ◽  
Guido Garay ◽  
Kate J. Brooks ◽  
Jaime E. Pineda
Keyword(s):  
Massive Star ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Star Forming ◽  
Star Forming Regions

Tunable excitons in bilayer graphene

Science ◽  
2017 ◽  
Vol 358 (6365) ◽  
pp. 907-910 ◽  
Author(s):  
Long Ju ◽  
Lei Wang ◽  
Ting Cao ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Bound States ◽  
Hexagonal Boron Nitride ◽  
Solid Material ◽  
Bilayer Graphene ◽  
Winding Number ◽  
Narrow Line ◽  
High Quality ◽  
Mid Infrared ◽  
Photocurrent Spectroscopy ◽  
Line Widths

Excitons, the bound states of an electron and a hole in a solid material, play a key role in the optical properties of insulators and semiconductors. Here, we report the observation of excitons in bilayer graphene (BLG) using photocurrent spectroscopy of high-quality BLG encapsulated in hexagonal boron nitride. We observed two prominent excitonic resonances with narrow line widths that are tunable from the mid-infrared to the terahertz range. These excitons obey optical selection rules distinct from those in conventional semiconductors and feature an electron pseudospin winding number of 2. An external magnetic field induces a large splitting of the valley excitons, corresponding to a g-factor of about 20. These findings open up opportunities to explore exciton physics with pseudospin texture in electrically tunable graphene systems​.

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