Structural transition pathway and bipolar switching of the GeTe–Sb2Te3 superlattice as interfacial phase-change memory

2019 ◽  
Vol 213 ◽  
pp. 303-319 ◽  
Author(s):  
Nobuki Inoue ◽  
Hisao Nakamura
Keyword(s):  
Phase Change ◽  
High Resistance ◽  
Structural Transition ◽  
Phase Change Memory ◽  
High Resistance State ◽  
Interfacial Phase ◽  
Bipolar Switching ◽  
Resistance State ◽  
Change Memory ◽  
Resistive Switching Mechanism

We investigated the resistive switching mechanism between the high-resistance state (HRS) and the low-resistance state (LRS) of the GeTe–Sb2Te3 (GST) superlattice.

Study of the Structural Transformation of Ge2Sb2Te5 Induced by Current Pulse in Phase Change Memory

2003 ◽  
Vol 803 ◽  
Author(s):  
Rong Zhao ◽  
Tow Chong Chong ◽  
Lu Ping Shi ◽  
Pik Kie Tan ◽  
Hao Meng ◽  
...  
Keyword(s):  
Phase Change ◽  
Structural Transformation ◽  
Active Layer ◽  
High Resistance ◽  
Phase Change Memory ◽  
High Resistance State ◽  
Face Centered Cubic ◽  
Cycle Number ◽  
Resistance State ◽  
Change Memory

ABSTRACTThe electrical induced structural transformation of Ge2Sb2Te5 thin film in phase change memory device was investigated using micro-Raman spectroscopy and transmission electronic microscopy (TEM). Selected area electron diffraction (SAD) pattern showed that the electrical-induced Ge2Sb2Te5 film was crystallized into a face-centered cubic structure. Micro-Raman spectra show that the Ge2Sb2Te5 active layer at the high resistance state exhibited two minor peaks superposed on the broad peak after several switch cycles, which is identical to those of the Ge2Sb2Te5 active layer at the low resistance state. This is most likely due to the accumulation of segregated crystallites. TEM results suggest that the existence of nano-sized nuclei clusters resulted in the reduced resistance for the Ge2Sb2Te5 active layer at the high resistance state after first several switches. The dependence of resistance on the cycle number indicates that the deterioration of the Ge2Sb2Te5 active layer is resulted from the incomplete amorphization process, which is consistent with the micro-Raman results.

Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states

Nanoscale ◽  
2017 ◽  
Vol 9 (27) ◽  
pp. 9386-9395 ◽  
Author(s):  
Hisao Nakamura ◽  
Ivan Rungger ◽  
Stefano Sanvito ◽  
Nobuki Inoue ◽  
Junji Tominaga ◽  
...  
Keyword(s):  
Phase Change ◽  
Resistive Switching ◽  
Theoretical Study ◽  
Phase Change Memory ◽  
Two Dimensional ◽  
Topological Properties ◽  
Switching Mechanism ◽  
Interfacial Phase ◽  
Change Memory ◽  
Resistive Switching Mechanism

A theoretical study of an interfacial phase change memory made of a GeTe–Sb2Te3 superlattice with W electrodes is presented to identify the high and low resistance states and the switching mechanism.

scholarly journals Chalcogenide van der Waals superlattices: a case example of interfacial phase-change memory

2019 ◽  
Vol 91 (11) ◽  
pp. 1777-1786 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
Junji Tominaga ◽  
...  
Keyword(s):  
Transition Metal ◽  
Phase Change ◽  
Topological Insulators ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Metal Dichalcogenides ◽  
Superlattice Structures ◽  
Change Memory

Abstract 2D van der Waals chalcogenides such as topological insulators and transition-metal dichalcogenides and their heterostructures are now at the forefront of semiconductor research. In this paper, we discuss the fundamental features and advantages of van der Waals bonded superlattices over conventional superlattices made of 3D materials and describe in more detail one practical example, namely, interfacial phase change memory based on GeTe–Sb2Te3 superlattice structures.

scholarly journals Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  
Keyword(s):  
Phase Change ◽  
Crucial Role ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

Small ◽  
2018 ◽  
Vol 14 (24) ◽  
pp. 1704514 ◽  
Author(s):  
Philippe Kowalczyk ◽  
Françoise Hippert ◽  
Nicolas Bernier ◽  
Cristian Mocuta ◽  
Chiara Sabbione ◽  
...  
Keyword(s):  
Phase Change ◽  
Van Der Waals ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability

2016 ◽  
Author(s):  
N. Ciocchini ◽  
M. Laudato ◽  
A. L. Lacaita ◽  
D. Ielmini ◽  
M. Boniardi ◽  
...  
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
Phase Change Memory ◽  
Bipolar Switching ◽  
Change Memory

Design of an Initialization Circuit Used in Phase Change Memory Chip

2014 ◽  
Vol 543-547 ◽  
pp. 471-474
Author(s):  
Qian Wang ◽  
Hou Peng Chen ◽  
Yi Yun Zhang ◽  
Xi Fan ◽  
Xi Li ◽  
...  
Keyword(s):  
Phase Change ◽  
High Resistance ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Memory Chip ◽  
Grain Sizes ◽  
Reset Operation ◽  
Materials Used ◽  
Change Memory

Design of a novel initialization circuit is presented in this paper. The initialization circuit is used to supply initialization current to the first test of phase change memory chip after delivery. Inhomogeneous crystalline grain sizes appear in phase change materials used in memory cells during manufacturing process. The crystalline phase with low resistance will convert to amorphous phase with high resistance after initialization, which is called RESET the memory cells to 0. Normal RESET operation current is not high enough to RESET great grain, which deteriorates bit yield of phase change memory chip. In comparison, the higher initialization current will increase bit yield observably.

Avalanche atomic switching in strain engineered Sb2Te3–GeTe interfacial phase-change memory cells

Nano Futures ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 025003 ◽  
Author(s):  
Xilin Zhou ◽  
Jitendra K Behera ◽  
Shilong Lv ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Interfacial Phase ◽  
Change Memory

A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

2014 ◽  
Vol 61 (5) ◽  
pp. 1246-1254 ◽  
Author(s):  
Athanasios Kiouseloglou ◽  
Gabriele Navarro ◽  
Veronique Sousa ◽  
Alain Persico ◽  
Anne Roule ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Programming Technique ◽  
Low Resistance ◽  
Resistance State ◽  
Change Memory
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