scholarly journals Transmission electron microscopy as an important tool for characterization of zeolite structures

2018 ◽  
Vol 5 (11) ◽  
pp. 2836-2855 ◽  
Author(s):  
W. Wan ◽  
J. Su ◽  
X. D. Zou ◽  
T. Willhammar
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Electron Tomography ◽  
Structure Characterization ◽  
Transmission Electron ◽  
High Resolution Tem

This review presents various TEM techniques including electron diffraction, high-resolution TEM and scanning TEM imaging, and electron tomography and their applications for structure characterization of zeolite materials.

A Tem Study of Inverse Melting in Nb45Cr55

1995 ◽  
Vol 398 ◽  
Author(s):  
W. Sinkler ◽  
C. Michaelsen ◽  
R. Bormann
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Grain Boundaries ◽  
Amorphous Phase ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTInverse melting of bcc Nb4sCr55 is investigated using transmission electron microscopy, high-resolution TEM and electron diffraction. It is shown that the transformation to the amorphous phase initiates at the bcc grain boundaries. The transformation results in an increase in incoherence, evidenced by a loss of bend contours. Some anisotropy is found in the amorphous phase produced by inverse melting, which is associated in HRTEM with preferentially oriented but discontinuous and distorted fringes. The results are consistent with the production of an amorphous phase by inverse melting.

Cross-Sectional Transmission Electron Microscopy of Si-Based Nanostructures

1996 ◽  
Vol 441 ◽  
Author(s):  
Maxim V. Sidorov ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Cross Sectional ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThis work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4 × 4 μm2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.

Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Ruvimov ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
K. J. Duxstad ◽  
E. E. Hailer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Ohmic Contacts ◽  
High Resolution Electron Microscopy ◽  
Structure Characterization ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Thin Polycrystalline

AbstractTransmission electron microscopy has been applied to characterize the structure of Ti/Al and Ti/Al/Ni/Au ohmic contacts on n-type GaN (˜1017 cm−3 ) epitaxial layers. A thin polycrystalline cubic TiN layer epitaxially matched to the (0001) GaN surface was detected at the interface with the GaN substrate. This layer was studied in detail by electron diffraction and high resolution electron microscopy. The orientation relationship between the cubic TiN and the GaN was found to be: {111}TiN//{00.1}GaN, [110]TiN//[11.0]GaN, [112 ]TiN//[ 10.0]GaN. The formation of this cubic TiN layer results in an excess of N vacancies in the GaN close to the interface which is considered to be the reason for the low resistance of the contact.

Characterization of the (0110) α-Ti/γ-TiH Interface Using High-Resolution Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS)

1996 ◽  
Vol 54 ◽  
pp. 108-109
Author(s):  
M. M. Tsai ◽  
J. M. Howe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Hydrogen Atoms ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
High Resolution Images ◽  
Electron Energy Loss ◽  
Image Simulations

Precipitation of γ-TiH in α-Ti-H alloys involves a hcp → fct lattice transformation with hydrogen as an interstitial diffusing element Results obtained from a previous TEM study have shown that the lengthening rate of γ-TiH is diffusionally controlled at 25°C, and possibly interfacially controlled at temperatures of 50°C and higher. Therefore, it is essential to ascertain the presence or absence of hydrogen atoms at the interface. TEM foils from a 800 ppm wt.% Ti-H alloy were analyzed using high-resolution TEM and image simulations in order to determine the effects of hydrogen on high-resolution images of the α-Ti/γ-TiH interface, and EELS was used to determine the whether the hydnde structure was fully formed up to the interface.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

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