scholarly journals Room temperature ferromagnetism in metallic Ti1−xVxO2 thin films

RSC Advances ◽  
2018 ◽  
Vol 8 (55) ◽  
pp. 31382-31387 ◽  
Author(s):  
Ze-Ting Zeng ◽  
Feng-Xian Jiang ◽  
Li-Fei Ji ◽  
Hai-Yun Zheng ◽  
Guo-Wei Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Diluted Magnetic ◽  
Metal Doped

Transition metal doped TiO2 diluted magnetic semiconductors have attracted considerable interest due to their room temperature ferromagnetism.

Annealing Temperature Dependent Ferromagnetic Behaviors Observed in Highly Orientated Pure NiO Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 956-959
Author(s):  
Yu Jun Zhang ◽  
Yuan Hua Lin ◽  
Ce Wen Nan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Annealing Temperature ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Film Surface ◽  
Nickel Metal ◽  
Diluted Magnetic ◽  
Ferromagnetic Impurity

Transition metal (TM) doped NiO is a promising candidate of p-type oxide diluted magnetic semiconductors (DMSs), which shows obvious room-temperature ferromagnetism. When researching the magnetic properties of DMSs, it is very important to get rid of ferromagnetic impurity phases by optimizing the preparation process. For this purpose, pure NiO thin films have been deposited by a pulsed laser deposition method and annealed by different annealing process. As-deposited or low-temperature annealed films show room-temperature ferromagnetism and high-temperature annealed films are not ferromagnetic. Nickel metal should be the origin of ferromagnetism in these thin films. On the other hand, high annealing temperature influences the microstructure of the film surface a lot. These results show a useful method to eliminate ferromagnetic impurity in NiO thin films and to optimize the preparation parameters of TM doped NiO thin films.

Combinatorial Investigation of Spintronic Materials

MRS Bulletin ◽  
2003 ◽  
Vol 28 (10) ◽  
pp. 734-739 ◽  
Author(s):  
Y. Matsumoto ◽  
H. Koinuma ◽  
T. Hasegawa ◽  
I. Takeuchi ◽  
F. Tsui ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Transition ◽  
Heusler Alloys ◽  
Oxide Systems ◽  
Diluted Magnetic

AbstractHigh-throughput synthesis and characterization techniques have been effective in discovering new materials and performing rapid mapping of phase diagrams. The application of the combinatorial strategy to explore doped transition-metal oxides has led to the discovery of a transparent room-temperature ferromagnetic oxide in Co-doped anatase TiO2. The discovery has triggered a wave of studies into other metal oxide systems in pursuit of diluted magnetic semiconductors. In this article, we describe recent combinatorial studies of magnetic transition-metal oxides, germanium-based magnetic semiconductors, and Heusler alloys.

Non-transition-metal doped diluted magnetic semiconductors

2009 ◽  
Vol 94 (10) ◽  
pp. 102504 ◽  
Author(s):  
Xiangyang Peng ◽  
Rajeev Ahuja
Keyword(s):  
Transition Metal ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic ◽  
Metal Doped

DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES

NANO ◽  
2008 ◽  
Vol 03 (01) ◽  
pp. 1-19 ◽  
Author(s):  
HEON-JIN CHOI ◽  
HAN-KYU SEONG ◽  
UNGKIL KIM
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Building Blocks ◽  
Free Standing ◽  
Diluted Magnetic ◽  
Mn Doped

An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.

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