Room temperature ferromagnetism in single-phase Zn1−x Mn x S diluted magnetic semiconductors fabricated by co-precipitation technique

2017 ◽  
Vol 123 (5) ◽  
Author(s):  
M. Hassan ◽  
S. Younas ◽  
F. Sher ◽  
S. S. Husain ◽  
S. Riaz ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Single Phase ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Precipitation Technique ◽  
Diluted Magnetic ◽  
Co Precipitation

DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES

NANO ◽  
2008 ◽  
Vol 03 (01) ◽  
pp. 1-19 ◽  
Author(s):  
HEON-JIN CHOI ◽  
HAN-KYU SEONG ◽  
UNGKIL KIM
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Building Blocks ◽  
Free Standing ◽  
Diluted Magnetic ◽  
Mn Doped

An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.

Annealing Temperature Dependent Ferromagnetic Behaviors Observed in Highly Orientated Pure NiO Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 956-959
Author(s):  
Yu Jun Zhang ◽  
Yuan Hua Lin ◽  
Ce Wen Nan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Annealing Temperature ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Film Surface ◽  
Nickel Metal ◽  
Diluted Magnetic ◽  
Ferromagnetic Impurity

Transition metal (TM) doped NiO is a promising candidate of p-type oxide diluted magnetic semiconductors (DMSs), which shows obvious room-temperature ferromagnetism. When researching the magnetic properties of DMSs, it is very important to get rid of ferromagnetic impurity phases by optimizing the preparation process. For this purpose, pure NiO thin films have been deposited by a pulsed laser deposition method and annealed by different annealing process. As-deposited or low-temperature annealed films show room-temperature ferromagnetism and high-temperature annealed films are not ferromagnetic. Nickel metal should be the origin of ferromagnetism in these thin films. On the other hand, high annealing temperature influences the microstructure of the film surface a lot. These results show a useful method to eliminate ferromagnetic impurity in NiO thin films and to optimize the preparation parameters of TM doped NiO thin films.

scholarly journals Room temperature ferromagnetism in metallic Ti1−xVxO2 thin films

RSC Advances ◽  
2018 ◽  
Vol 8 (55) ◽  
pp. 31382-31387 ◽  
Author(s):  
Ze-Ting Zeng ◽  
Feng-Xian Jiang ◽  
Li-Fei Ji ◽  
Hai-Yun Zheng ◽  
Guo-Wei Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Diluted Magnetic ◽  
Metal Doped

Transition metal doped TiO2 diluted magnetic semiconductors have attracted considerable interest due to their room temperature ferromagnetism.

Room Temperature Ferromagnetism in Spin-coated Anatase- and Rutile- Ti1-x Mx O2 ( M= Fe, Mn, Co) Films

2009 ◽  
Vol 1201 ◽  
Author(s):  
Danilo Barrionuevo ◽  
Surinder P Singh ◽  
Maharaj S. Tomar
Keyword(s):  
Metal Ion ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Sol Gel ◽  
Ion Concentration ◽  
Spintronic Devices ◽  
Diluted Magnetic ◽  
Quartz Substrates

AbstractDiluted magnetic semiconductors (DMS) have been explored extensively, because of their potential application in spintronic devices. We studied the structural optical and magnetic properties of Ti1-xMxO2 (M= Fe, Mn, Co; x = 0.00, 0.05, 0.08, 0.10, 0.15, 0.20, 0.25, 0.30), thin films by sol-gel process and deposited using spin coating on Pt (Pt/Ti/SiO2/Si) and quartz substrates. X-ray diffraction studies and Raman spectroscopy reveal anatase and rutile phases of the synthesized films when annealed at 500 and 10000 C, respectively. Optical transmission measurements show high degree of transparency that decreases with increase in transition metal ion concentration. The films show room temperature ferromagnetism, suggesting their potential in spin based heterojunction devices.

Novel Room-temperature Ferromagnetic Semiconductors Pb1-x-yCaxCryTe

2009 ◽  
Vol 1183 ◽  
Author(s):  
Evgeny P. Skipetrov ◽  
Elena A. Zvereva ◽  
Nikolay A. Pichugin ◽  
Alexey E. Primenko ◽  
Evgeny I. Slyn'ko ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Impurity Level ◽  
Ferromagnetic Semiconductors ◽  
Magnetization Curves ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

Abstract The galvanomagnetic and magnetic properties of novel diluted magnetic semiconductors Pb1-x-yCaxCryTe (x=0.06-0.20, y=0.003-0.045) have been investigated. Temperature dependencies of the resistivity and the Hall coefficient have a metallic character indicating the pinning of Fermi level by the chromium impurity level on the background of the conduction band states. Magnetization curves display a clear hysteresis loop over the whole temperature range investigated. The Curie temperature, determined from the temperature dependencies of magnetization, achieves 345 K. Possible mechanisms of ferromagnetic ordering were discussed.

STRUCTURAL, SURFACE MORPHOLOGICAL AND MAGNETIC STUDIES OF Zn1−xFexS (x=0.00–0.10) DILUTED MAGNETIC SEMICONDUCTORS GROWN BY CO-PRECIPITATION METHOD

2018 ◽  
Vol 25 (01) ◽  
pp. 1850044
Author(s):  
M. HASSAN ◽  
M. GHAZANFAR ◽  
N. AROOJ ◽  
S. RIAZ ◽  
S. SAJJAD HUSSAIN ◽  
...  
Keyword(s):  
Crystallite Size ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Hysteresis Loops ◽  
Secondary Phase ◽  
Precipitation Method ◽  
Ferromagnetic Behavior ◽  
Magnetic Studies ◽  
Diluted Magnetic ◽  
Co Precipitation

We have fabricated Zn[Formula: see text]FexS ([Formula: see text], 0.02, 0.04, 0.06, 0.08 and 0.10) diluted magnetic semiconductors using co-precipitation method. X-ray diffraction patterns depict that Zn[Formula: see text]FexS appears as a dominant phase with cubic zinc blende structure and nanoscale crystallite size. In addition, a secondary phase of rhombohedral ZnS also appears; however, no additional phase arises that primarily belongs to Fe dopant. Using Debye–Scherrer relation, the crystallite size is found to be in the range of 20–27[Formula: see text]nm, which is in good agreement with the crystallite size calculated using the Williamson–Hall (WH) plot method. The appearance of secondary phase provoked to study the residual strain using Stokes–Wilson equation, which is nearly consistent to that observed using WH plot method. The surface morphology, revealed using scanning electron microscopy, depicts non-uniform surface structure with a variety of grains and void dimensions. Hysteresis loops measured for Zn[Formula: see text]FexS at room temperature (RT) illustrate a paramagnetic behavior at higher fields; however, small ferromagnetic behavior is evident due to the small openings of the measured hysteresis loops around the origin. The measured RT ferromagnetism reveals the potential spintronic device applications of the studied diluted magnetic semiconductors.

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