Reaction Mechanism of Atomic Layer Deposition of Aluminum Sulfide using Trimethylaluminum and Hydrogen Sulfide

2021 ◽  
Author(s):  
Yanghong Yu ◽  
Zhongchao Zhou ◽  
Lina Xu ◽  
Yihong Ding ◽  
Guoyong Fang
Keyword(s):  
Hydrogen Sulfide ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Sulfides ◽  
Layer Deposition

Atomic layer deposition (ALD) is a nanopreparation technique for materials and is widely used in the fields of microelectronics, energy and catalysis. ALD methods for metal sulfides, such as Al2S3...

Reaction Mechanism of Pt Atomic Layer Deposition on Various Textile Surfaces

2019 ◽  
Vol 31 (21) ◽  
pp. 8995-9002
Author(s):  
Il-Kwon Oh ◽  
Jong Seo Park ◽  
Mohammad Rizwan Khan ◽  
Kangsik Kim ◽  
Zonghoon Lee ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films

2016 ◽  
Vol 16 (5) ◽  
pp. 4924-4928 ◽  
Author(s):  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jae-Min Park ◽  
Luchana L Yusup ◽  
Hana Ishii ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Antimony Telluride ◽  
Layer Deposition

Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer deposition

2009 ◽  
Vol 517 (15) ◽  
pp. 4355-4359 ◽  
Author(s):  
Lin Dong ◽  
Qing-Qing Sun ◽  
Yu Shi ◽  
Hao-Wen Guo ◽  
Han Liu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Reaction ◽  
Nitrogen Doped ◽  
Layer Deposition

Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition. Growth of Zirconium Dioxide Thin Films and Reaction Mechanism Studies

2004 ◽  
Vol 16 (26) ◽  
pp. 5630-5636 ◽  
Author(s):  
Raija Matero ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
Timo Sajavaara ◽  
Anthony C. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Zirconium Dioxide ◽  
Atomic Layer ◽  
Layer Deposition

Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film

2021 ◽  
Author(s):  
Yeonchoo Cho ◽  
Sang Hyeon Kim ◽  
Byung Seok Kim ◽  
Youngjin Kim ◽  
Woojin Jeon
Keyword(s):  
Thin Film ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Chemical Reaction ◽  
Tio2 Thin Film ◽  
Dft Calculation ◽  
Atomic Layer ◽  
Growth Behaviour ◽  
Chemical Reaction Mechanism ◽  
Layer Deposition

This study investigates the chemical reaction mechanism of the ALD to obtain a designated growth behaviour in theoretical and experimental way, hence, provides significant implications for understanding the ALD mechanism based on the DFT calculation.

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