Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors
2018 ◽
Vol 6
(48)
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pp. 13359-13366
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Keyword(s):
This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.
2019 ◽
Vol 85
(1)
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pp. 277-283
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2005 ◽
Vol 20
(4)
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pp. 931-939
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2010 ◽
Vol 31
(12)
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pp. 1485-1487
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Keyword(s):
2018 ◽
Vol 19
(2)
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pp. 71-80
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2014 ◽
Vol 15
(11)
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pp. 3173-3182
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Keyword(s):
Keyword(s):