Low-Temperature Cross-Linking Benzocyclobutene Based Polymer Dielectric for Organic Thin Film Transistors on Plastic Substrates

2019 ◽  
Vol 85 (1) ◽  
pp. 277-283 ◽  
Author(s):  
Rawad K. Hallani ◽  
Maximilian Moser ◽  
Helen Bristow ◽  
Maud V. C. Jenart ◽  
Hendrik Faber ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Organic Thin Film ◽  
Plastic Substrates ◽  
Polymer Dielectric

Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors

2018 ◽  
Vol 6 (48) ◽  
pp. 13359-13366 ◽  
Author(s):  
Joo-Young Kim ◽  
Ji Whan Kim ◽  
Eun Kyung Lee ◽  
Jeong-Il Park ◽  
Bang-Lin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Breakdown Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Insulating Materials ◽  
Plastic Substrates ◽  
Insulating Material ◽  
Low Temperature Processing

This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.

Low-temperature processable inherently photosensitive polyimide gate dielectric for organic thin-film transistors: Synthesis, characterization, and application to transistors

2005 ◽  
Vol 20 (4) ◽  
pp. 931-939 ◽  
Author(s):  
Seungmoon Pyo ◽  
Hyunsam Son ◽  
Mi Hye Yi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Cost ◽  
Polyimide Film ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Aromatic Diamines ◽  
Plastic Substrates

Low-temperature processable inherently photosensitive polyimide was prepared from a dianhydride, 3,3′,4,4′-benzophenone tetracarboxylic dianhydride, and aromatic diamines, 4,4′-diamino-3,3′dimethyl-diphenylmethane, through a polycondensation reaction, followed by a chemical imidization method. The photosensitive polyimide cured at 180 °C is used as a gate dielectric to fabricate flexible organic thin-film transistors with pentacene as an active semiconductor on polyethersulfone substrate. With the inherently photosensitive polyimide, the access to the gate electrode could be created easily without complicated and expensive lithographic techniques. A field effect carrier mobility of 0.007 cm2/V s was obtained for the pentacene organic thin-film transistors (OTFTs) with the photo-patterned polyimide as a gate dielectric. More detailed analysis for the pentacene OTFTs will be given with electrical properties of the thin polyimide film. Low-temperature processability and patternability of the polyimide give us more freedom to choose plastic substrates in OTFTs and facilitate the realization of low-cost organic electronics.

scholarly journals Organic thin-film transistors with over 10 cm2/Vs mobility through low-temperature solution coating

2018 ◽  
Vol 19 (2) ◽  
pp. 71-80 ◽  
Author(s):  
Chuan Liu ◽  
Xuying Liu ◽  
Takeo Minari ◽  
Masayuki Kanehara ◽  
Yong-Young Noh
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Temperature Solution

Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

2019 ◽  
Vol 7 (19) ◽  
pp. 5821-5829 ◽  
Author(s):  
Joo-Young Kim ◽  
Eun Kyung Lee ◽  
Jiyoung Jung ◽  
Don-Wook Lee ◽  
Youngjun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Hybrid Material ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Urethane Acrylate ◽  
Organic Thin Film ◽  
Electrical Stability ◽  
Inorganic Hybrid

A solution-processable organic–inorganic hybrid material composed of a polysiloxane urethane acrylate composite (PSUAC) was developed through a dual cross-linking mechanism and satisfies all the requirements for use as a gate dielectric for flexible organic thin-film transistors (OTFTs).

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