Optimizing the thermoelectric transport properties of BiCuSeO via doping with the rare-earth variable-valence element Yb

2018 ◽  
Vol 6 (31) ◽  
pp. 8479-8487 ◽  
Author(s):  
Huijun Kang ◽  
Jinling Li ◽  
Yinqiao Liu ◽  
Enyu Guo ◽  
Zongning Chen ◽  
...  

Herein, we propose for the first time a novel recipe to improve the thermoelectric properties of BiCuSeO by doping with variable valence elements.

2000 ◽  
Vol 626 ◽  
Author(s):  
S. Cho ◽  
Y. Kim ◽  
A. DiVenere ◽  
G. K. L. Wong ◽  
A. J. Freeman ◽  
...  

ABSTRACTWe report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-ZT materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.


2015 ◽  
Vol 51 (9) ◽  
pp. 1594-1596 ◽  
Author(s):  
Qun Wang ◽  
Yuanyuan Fang ◽  
Hang Yin ◽  
Jianjun Li

For the first time, quaternary single-crystal-like porous AgPb10BiTe12 nanosheets in two solid forms (solid solution and a Bi-rich region coexist) were achieved. A significant enhancement of thermoelectric performance was realized through nanoscale grain boundaries and macroscale porous structures.


2020 ◽  
Vol 22 (4) ◽  
pp. 1911-1922
Author(s):  
Kunpeng Yuan ◽  
Zhehao Sun ◽  
Xiaoliang Zhang ◽  
Xiaojing Gong ◽  
Dawei Tang

This work offers insights into the thermoelectric transport properties in rhombohedral GeSe by first-principles calculations and demonstrates that both p-type and n-type GeSe are potential high-performance thermoelectric materials.


2019 ◽  
Author(s):  
Xuegao Hu ◽  
Wenke He ◽  
Dongyang Wang ◽  
Zhiwei Huang ◽  
Li-Dong Zhao

Author(s):  
Qingyu Bai ◽  
Xinyue Zhang ◽  
Bing Shan ◽  
Xuemin Shi ◽  
Cheng Sun ◽  
...  

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