From nanofibers to ordered ZnO/NiO heterojunction arrays for self-powered and transparent UV photodetectors

2019 ◽  
Vol 7 (2) ◽  
pp. 223-229 ◽  
Author(s):  
Zhiming Zhang ◽  
Yi Ning ◽  
Xiaosheng Fang

Ordered ZnO/NiO heterojunction arrays prepared via electrospinning using three-assisted-electrodes were achieved for high-performance self-powered ultraviolet photodetectors.

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.


Nanoscale ◽  
2017 ◽  
Vol 9 (13) ◽  
pp. 4536-4543 ◽  
Author(s):  
Buddha Deka Boruah ◽  
Shanmukh Naidu Majji ◽  
Abha Misra

Nano Energy ◽  
2022 ◽  
pp. 106945
Author(s):  
Yiyao Peng ◽  
Junfeng Lu ◽  
Xiandi Wang ◽  
Wenda Ma ◽  
Miaoling Que ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Lalit Goswami ◽  
Neha Aggarwal ◽  
Pargam Vashishtha ◽  
Shubhendra Kumar Jain ◽  
Shruti Nirantar ◽  
...  

AbstractThe fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high ILight/IDark ratio (> 104), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ − 3 V along with very high external quantum efficiency (~ 104%), lower noise equivalent power (~ 10–13 WHz−1/2) and excellent UV–Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.


2018 ◽  
Vol 452 ◽  
pp. 43-48 ◽  
Author(s):  
Mingxiang Zhang ◽  
Ying Liu ◽  
Mengqi Yang ◽  
Wen Zhang ◽  
Jinyuan Zhou ◽  
...  

2020 ◽  
Vol 8 (28) ◽  
pp. 9646-9654
Author(s):  
Rui Cao ◽  
Jianping Xu ◽  
Shaobo Shi ◽  
Jing Chen ◽  
Ding Liu ◽  
...  

The morphology and geometry of semiconductors will affect the photoresponse performance of mixed-dimensional heterojunction photodetectors (PDs).


2017 ◽  
Vol 41 (18) ◽  
pp. 10447-10451 ◽  
Author(s):  
Shuxiong Gao ◽  
Libin Tang ◽  
Jinzhong Xiang ◽  
Rongbin Ji ◽  
Sin Ki Lai ◽  
...  

Sulphur-doped GQDs were prepared using a novel co-combustion method (T-X-J method), and ultra-high performance UV photodetectors based on S-GQDs were fabricated.


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