Microwave plasma-assisted chemical vapor deposition of microcrystalline diamond films via graphite etching under different hydrogen flow rates

CrystEngComm ◽  
2019 ◽  
Vol 21 (15) ◽  
pp. 2502-2507 ◽  
Author(s):  
Kaili Yao ◽  
Bing Dai ◽  
Xiaojun Tan ◽  
Lei Yang ◽  
Jiwen Zhao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Source ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Flow Rates ◽  
Hydrogen Flow

The growth of microcrystalline diamond films with different hydrogen flow rates via etching graphite as the carbon source was studied.

Nitrogen and hydrogen in thick diamond films grown by microwave plasma enhanced chemical vapor deposition at variable H2 flow rates

2000 ◽  
Vol 87 (12) ◽  
pp. 8741-8746 ◽  
Author(s):  
S. V. Nistor ◽  
M. Stefan ◽  
V. Ralchenko ◽  
A. Khomich ◽  
D. Schoemaker
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Flow Rates

Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition

2021 ◽  
Vol 55 (1) ◽  
pp. 66-75
Author(s):  
A. L. Vikharev ◽  
S. A. Bogdanov ◽  
N. M. Ovechkin ◽  
O. A. Ivanov ◽  
D. B. Radishev ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Nanocrystalline Diamond Films

The Effects of Hydrogen Flowrate during Pre-Annealing on Graphene Growth by Chemical Vapor Deposition Using Methanol as a Liquid Carbon Precursor

2019 ◽  
Vol 290 ◽  
pp. 107-112
Author(s):  
Raed Abdalrheem ◽  
Fong Kwong Yam ◽  
Abdul Razak Ibrahim ◽  
Khi Poay Beh ◽  
Hwee San Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Light Transmittance ◽  
High Hydrogen ◽  
Flow Rates ◽  
Hydrogen Flow ◽  
Number Of Layers ◽  
Crystallite Sizes ◽  
Grown Graphene

Studying an influence of several parameters on Chemical Vapor Deposition (CVD) used for graphene synthesis is crucial to optimizing the graphene quality to be Compatible with advanced devices. The effect of different hydrogen (H2) flow-rates (0, 50, 100, 150, 200, 250, and 300 sccm) during the pre-annealing process on CVD grown graphene have been reported. This study revealed that hydrogen flow rates during annealing changed the surface roughness/smoothness of the copper substrates. For high hydrogen flow rates, the smoothing effect was increased. Furthermore, the annealed graphene samples emerged a deferent number of layers because of morphological surface changes. According to Raman D- to G-band intensity ratios (ID/IG), the graphene quality was influenced by the annealing hydrogen flowrate. The visible light transmittance values of the grown graphene samples confirmed a few number of layers (mono to seven-layer). Mostly, the samples which annealed under moderate hydrogen flow rates showed less defects intensities and higher crystallite sizes.

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

2018 ◽  
Vol 281 ◽  
pp. 893-899 ◽  
Author(s):  
Yi Fan Xi ◽  
Jian Huang ◽  
Ke Tang ◽  
Xin Yu Zhou ◽  
Bing Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

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