Chromium(iii)-based potential molecular quantum bits with long coherence times

2019 ◽  
Vol 21 (13) ◽  
pp. 6976-6983 ◽  
Author(s):  
Samuel Lenz ◽  
Heiko Bamberger ◽  
Philipp P. Hallmen ◽  
Yannick Thiebes ◽  
Sven Otto ◽  
...  

[Cr(ddpd)2]3+ displays record phase memory times of up to 8.4 μs at 7 K. This is likely enabled by the very small zero-field splitting of D = 0.18 cm−1 which is due to the ligand field quartet state lying at very high energy.

1964 ◽  
Vol 82 (1) ◽  
pp. 3-81 ◽  
Author(s):  
Evgenii L. Feinberg ◽  
Dmitrii S. Chernavskii

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1373
Author(s):  
Fadis F. Murzakhanov ◽  
Boris V. Yavkin ◽  
Georgiy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ivan E. Mumdzhi ◽  
...  

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
L. Whitmore ◽  
R. I. Mackay ◽  
M. van Herk ◽  
J. K. Jones ◽  
R. M. Jones

AbstractThis paper presents the first demonstration of deeply penetrating dose delivery using focused very high energy electron (VHEE) beams using quadrupole magnets in Monte Carlo simulations. We show that the focal point is readily modified by linearly changing the quadrupole magnet strength only. We also present a weighted sum of focused electron beams to form a spread-out electron peak (SOEP) over a target region. This has a significantly reduced entrance dose compared to a proton-based spread-out Bragg peak (SOBP). Very high energy electron (VHEE) beams are an exciting prospect in external beam radiotherapy. VHEEs are less sensitive to inhomogeneities than proton and photon beams, have a deep dose reach and could potentially be used to deliver FLASH radiotherapy. The dose distributions of unfocused VHEE produce high entrance and exit doses compared to other radiotherapy modalities unless focusing is employed, and in this case the entrance dose is considerably improved over existing radiations. We have investigated both symmetric and asymmetric focusing as well as focusing with a range of beam energies.


1981 ◽  
Vol 8 (3) ◽  
pp. 205-213 ◽  
Author(s):  
Kisei Kinoshita ◽  
Akira Minaka ◽  
Hiroyuki Sumiyoshi

2013 ◽  
Vol 777 (1) ◽  
pp. L18 ◽  
Author(s):  
Y. T. Tanaka ◽  
C. C. Cheung ◽  
Y. Inoue ◽  
Ł. Stawarz ◽  
M. Ajello ◽  
...  

1990 ◽  
Vol 42 (4) ◽  
pp. 1519-1529 ◽  
Author(s):  
S. Shaheen ◽  
F. D. Becchetti ◽  
D. A. Roberts ◽  
J. W. Jänecke ◽  
R. L. Stern ◽  
...  

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