Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Nanoscale ◽  
2019 ◽  
Vol 11 (27) ◽  
pp. 12871-12877 ◽  
Author(s):  
Jaewoo Shim ◽  
Sung woon Jang ◽  
Ji-Hye Lim ◽  
Hyeongjun Kim ◽  
Dong-Ho Kang ◽  
...  

We report a polarity controllable TMD transistor that can operate as both an n- and a p-channel transistor. We then demonstrate a complementary inverter circuit on a single TMD material and its expandability toward a three-stage ring oscillator.

Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3341-3354
Author(s):  
Seung-Young Seo ◽  
Dong-Hwan Yang ◽  
Gunho Moon ◽  
Odongo F. N. Okello ◽  
Min Yeong Park ◽  
...  

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.


2021 ◽  
pp. 2006601
Author(s):  
Soo Ho Choi ◽  
Hyung‐Jin Kim ◽  
Bumsub Song ◽  
Yong In Kim ◽  
Gyeongtak Han ◽  
...  

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