2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

2016 ◽

Cited By ~ 2

Author(s):

Chin-I Kuan ◽

Horng-Chih Lin ◽

Pei-Wen Li ◽

Tiao-Yuan Huang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Short Channel ◽

Mobility Performance

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A TiO2-based volatile threshold switching selector device with 107 non linearity and sub 100 pA Off current

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480484 ◽

2016 ◽

Cited By ~ 5

Author(s):

Simone Cortese ◽

Maria Trapatseli ◽

Ali Khiat ◽

Themistoklis Prodromakis

Keyword(s):

Threshold Switching

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Record high current density and low contact resistance in MoS2 FETs by ion doping

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480511 ◽

2016 ◽

Cited By ~ 5

Author(s):

Sara Fathipour ◽

Hua-Min Li ◽

Maja Remskar ◽

Lingyen Yeh ◽

Wilman Tsai ◽

...

Keyword(s):

Contact Resistance ◽

Current Density ◽

High Current Density ◽

High Current ◽

Ion Doping

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Optimization of fin profile and implant in bulk FinFET technology

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480517 ◽

2016 ◽

Cited By ~ 3

Author(s):

Y.-S. Wu ◽

C.-H. Tsai ◽

T. Miyashita ◽

P.-N. Chen ◽

B.-C. Hsu ◽

...

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The opportunity for bulk GaN power device — Technology and application

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480532 ◽

2016 ◽

Author(s):

Zhen-Yu Li

Keyword(s):

Power Device ◽

Bulk Gan ◽

Device Technology

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RF performance of passive components on state-of-art trap rich silicon-on-insulator substrates

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480530 ◽

2016 ◽

Cited By ~ 4

Author(s):

Lei Zhu ◽

Shuangke Liu ◽

F. Allibert ◽

E. Desbonnets ◽

I. Radu ◽

...

Keyword(s):

Silicon On Insulator ◽

Passive Components ◽

Rf Performance ◽

State Of Art

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A compact model for the SET parameter variations of oxide RRAM array

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480503 ◽

2016 ◽

Cited By ~ 1

Author(s):

Lingjun Dai ◽

Huaqiang Wu ◽

Bin Gao ◽

He Qian

Keyword(s):

Compact Model ◽

Parameter Variations

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Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage ( 2V) operation

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480497 ◽

2016 ◽

Cited By ~ 2

Author(s):

Ying-Chen Chen ◽

Yao-Feng Chang ◽

Burt Fowler ◽

Fei Zhou ◽

Xiaohan Wu ◽

...

Keyword(s):

Frequency Response ◽

Low Voltage ◽

Comprehensive Study

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Experimental demonstration of performance improvement with a strain boost technique tailored for 3-Dimensional structure on nano-scaled bulk pFinFETs

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480536 ◽

2016 ◽

Author(s):

Ta-Chun Lin ◽

Yun-Ju Sun ◽

Ming-Huei Lin ◽

Tomonari Yamamoto ◽

Shyh-Horng Yang

Keyword(s):

Performance Improvement ◽

Dimensional Structure ◽

Experimental Demonstration ◽

3 Dimensional

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PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480531 ◽

2016 ◽

Cited By ~ 4

Author(s):

C.-N. Ni ◽

Y.-C. Huang ◽

S. Jun ◽

S. Sun ◽

A. Vyas ◽

...

Keyword(s):

Contact Resistance

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Short-channel BEOL ZnON thin-film transistors with superior mobility performance

A TiO2-based volatile threshold switching selector device with 107 non linearity and sub 100 pA Off current

Record high current density and low contact resistance in MoS2 FETs by ion doping

Optimization of fin profile and implant in bulk FinFET technology

The opportunity for bulk GaN power device — Technology and application

RF performance of passive components on state-of-art trap rich silicon-on-insulator substrates

A compact model for the SET parameter variations of oxide RRAM array

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage ( 2V) operation

Experimental demonstration of performance improvement with a strain boost technique tailored for 3-Dimensional structure on nano-scaled bulk pFinFETs

PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond

Export Citation Format

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Short-channel BEOL ZnON thin-film transistors with superior mobility performance

A TiO2-based volatile threshold switching selector device with 107 non linearity and sub 100 pA Off current

Record high current density and low contact resistance in MoS2 FETs by ion doping

Optimization of fin profile and implant in bulk FinFET technology

The opportunity for bulk GaN power device — Technology and application

RF performance of passive components on state-of-art trap rich silicon-on-insulator substrates

A compact model for the SET parameter variations of oxide RRAM array

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage ( 2V) operation

Experimental demonstration of performance improvement with a strain boost technique tailored for 3-Dimensional structure on nano-scaled bulk pFinFETs

PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Latest Publications