Near full light absorption and full charge collection in 1-micron thick quantum dot photodetector using intercalated graphene monolayer electrodes

Nanoscale ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 4909-4915 ◽  
Author(s):  
Wenjun Chen ◽  
Seungbae Ahn ◽  
Marquez Balingit ◽  
Jiaying Wang ◽  
Malcolm Lockett ◽  
...  

High charge collection efficiency in Vis and NIR using intercalated QD/Gr systems.

Sensors ◽  
2019 ◽  
Vol 19 (23) ◽  
pp. 5107 ◽  
Author(s):  
Sandupatla ◽  
Arulkumaran ◽  
Ranjan ◽  
Ing ◽  
Murmu ◽  
...  

A low voltage (–20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky diodes on free-standing n+-GaN substrate. The observed CCE was 30% higher than the bulk GaN (400 µm)-based Schottky barrier diodes (SBD) at –20 V. This is the first report of α–particle detection at 5.48 MeV with a high CCE at –20 V operation. In addition, the detectors also exhibited a three-times smaller variation in CCE (0.12 %/V) with a change in bias conditions from –120 V to –20 V. The dramatic reduction in CCE variation with voltage and improved CCE was a result of the reduced charge carrier density (CCD) due to the compensation by Mg in the grown drift layer (DL), which resulted in the increased depletion width (DW) of the fabricated GaN SBDs. The SBDs also reached a CCE of approximately 96.7% at –300 V.


2020 ◽  
Vol 12 (39) ◽  
pp. 43576-43585
Author(s):  
Jonghee Yang ◽  
Jae Taek Oh ◽  
Minseon Kim ◽  
Hochan Song ◽  
Danil W. Boukhvalov ◽  
...  

2017 ◽  
Vol 19 (6) ◽  
pp. 4607-4617 ◽  
Author(s):  
Ankita Kolay ◽  
P. Naresh Kumar ◽  
Sarode Krishna Kumar ◽  
Melepurath Deepa

Charge transfer at the TiO2/quantum dot (QD) interface, charge collection at the TiO2/QD/current collector (FTO or SnO2:F) interface, and back electron transfer at the TiO2/QDs/S2− interface are processes controlled by the electron transport layer or TiO2.


2009 ◽  
Vol 95 (19) ◽  
pp. 193103 ◽  
Author(s):  
Kurtis S. Leschkies ◽  
Alan G. Jacobs ◽  
David J. Norris ◽  
Eray S. Aydil

2002 ◽  
Vol 49 (1) ◽  
pp. 277-280 ◽  
Author(s):  
A. Brambilla ◽  
D. Tromson ◽  
P. Bergonzo ◽  
C. Mer ◽  
F. Foulon

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  

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