scholarly journals Chemical vapor transport growth of bulk black phosphorus single crystals

2020 ◽  
Vol 7 (15) ◽  
pp. 2867-2879
Author(s):  
Muhammad Khurram ◽  
Zhaojian Sun ◽  
Ziming Zhang ◽  
Qingfeng Yan
Keyword(s):  
Single Crystal ◽  
Recent Progress ◽  
Reaction System ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Black Phosphorus ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Bulk Single Crystal ◽  
Nucleation And Growth Mechanism

Recent progress in growth of bulk black phosphorus single crystal by CVT method has been briefly reviewed with the emphasis on reaction system, nucleation and growth mechanism as well as advancement in growth of doped BP bulk single crystal.

Synthesis and electrical properties of single crystalline black phosphorus nanoribbons

CrystEngComm ◽  
2020 ◽  
Vol 22 (22) ◽  
pp. 3824-3830 ◽  
Author(s):  
Ying Yu ◽  
Jiadong Yao ◽  
Xinyue Niu ◽  
Boran Xing ◽  
Yali Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Chemical Vapor ◽  
Black Phosphorus ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Single Crystalline ◽  
Zigzag Direction

Single crystal black phosphorus nanoribbons along the zigzag direction have been successfully grown by chemical vapor transport.

Single crystal growth of CdSiAs2 by chemical vapor transport; its structure and electrical properties

1984 ◽  
Vol 67 (2) ◽  
pp. 185-194 ◽  
Author(s):  
M. Avirović ◽  
M. Lux-Steiner ◽  
U. Elrod ◽  
J. Hönigschmid ◽  
E. Bucher
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystal ◽  
Chemical Vapor ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Chemical Vapor Transport

Microstructure of Chemical Vapor Transport Deposition Single Crystal Tungsten Coating Working at 1600°C

2016 ◽  
Vol 849 ◽  
pp. 597-602
Author(s):  
Hong Tao Huang ◽  
Yong Feng Wei ◽  
Jian Ping Zheng ◽  
Cheng Wen Tan
Keyword(s):  
Single Crystal ◽  
Electron Backscatter Diffraction ◽  
Chemical Vapor ◽  
Electrical Energy ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Tungsten Coating ◽  
Ebsd Technique ◽  
Thermionic Energy Conversion ◽  
Etched Surface

Thermionic energy conversion is a process by which thermal energy is transformed into electrical energy directly without the intermediate steps. Microstructure of Chemical Vapor Transport Deposited (CVTD) single crystal tungsten coating working at 1600°C for 1000 h was investigated using optical microscopy and electron backscatter diffraction (EBSD) technique. The experimental results showed that the etching morphology of single crystal tungsten coating was not clear compared to the etching morphology before working. The electro-etched surface of single crystal tungsten coating mainly consist of {110} crystal planes and {112} crystal planes before working at 1600°C. The surface of the single crystal tungsten coating mainly consists of near {110} crystal planes and near {112} crystal planes instead after working at 1600°C.

Uniform Tellurium Doping in Black Phosphorus Single Crystals by Chemical Vapor Transport

2018 ◽  
Vol 57 (7) ◽  
pp. 4098-4103 ◽  
Author(s):  
Ziming Zhang ◽  
Muhammad Khurram ◽  
Zhaojian Sun ◽  
Qingfeng Yan
Keyword(s):  
Single Crystals ◽  
Chemical Vapor ◽  
Black Phosphorus ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Tellurium Doping

Crystallization kinetics of amorphous red phosphorus to black phosphorus by chemical vapor transport

CrystEngComm ◽  
2021 ◽  
Author(s):  
Shuai Zhang ◽  
Shufang Ma ◽  
Xiaodong Hao ◽  
Qingming Liu ◽  
Yan yan Hou ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Structural Features ◽  
Black Phosphorus ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Red Phosphorus ◽  
Broad Application ◽  
Kinetics Of ◽  
Application Prospects

Black phosphorus (BP) is an emerging two-dimensional semiconductor material, which has interesting structural features and broad application prospects in the fields of optoelectronic devices, energy storage, and biomedicine. However, a...

Experimental Evidence for Nitrogen as a Deep Acceptor in ZnO

2011 ◽  
Vol 1394 ◽  
Author(s):  
M.C. Tarun ◽  
M. Zafar Iqbal ◽  
M.D. McCluskey ◽  
J. Huso ◽  
L. Bergman
Keyword(s):  
Nitrogen Doping ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Excitation Threshold ◽  
Bulk Single Crystal ◽  
Deep Acceptor ◽  
The Past ◽  
Configuration Coordinate

ABSTRACTWhile zinc oxide is a promising material for blue and UV solid-state lighting devices, the lack of p-type doping has prevented ZnO from becoming a dominant material for optoelectronic applications. Over the past decade, numerous reports have claimed that nitrogen is a viable p-type dopant in ZnO. However, recent calculations by Lyons, Janotti, and Van de Walle [Appl. Phys. Lett. 95, 252105 (2009)] suggest that nitrogen is a deep acceptor. In our work, we performed photoluminescence (PL) measurements on bulk, single crystal ZnO grown by chemical vapor transport. Nitrogen doping was achieved by growing in ammonia. In prior work at room temperature, we observed a broad PL band at ∼1.7 eV, with an excitation threshold of ∼2.2 eV, consistent with the calculated configuration-coordinate diagram. In the present work, at liquid-helium temperatures, the PL emission increases in intensity and red-shifts by ∼0.2 eV. A peak is observed at 3.267 eV, which we tentatively attribute to an exciton bound to a nitrogen acceptor. Our experimental results indicate that nitrogen is indeed a deep acceptor and cannot be used to produce p-type ZnO.

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