High-performance n- and p-type organic single-crystal field-effect transistors with an air-gap dielectric towards anti-ambipolar transport

2020 ◽  
Vol 8 (13) ◽  
pp. 4303-4308 ◽  
Author(s):  
Jianghong Liu ◽  
Jie Liu ◽  
Jing Zhang ◽  
Chunlei Li ◽  
Qiuhong Cui ◽  
...  

By combining high-performance n- and p-type single crystals with an air-gap dielectric, excellent anti-ambipolar transport with a small hysteresis was achieved.

ACS Nano ◽  
2011 ◽  
Vol 5 (3) ◽  
pp. 2412-2412 ◽  
Author(s):  
Wei Liu ◽  
Biyun Li Jackson ◽  
Jing Zhu ◽  
Cong-Qin Miao ◽  
Choong-Heui Chung ◽  
...  

ACS Nano ◽  
2010 ◽  
Vol 4 (7) ◽  
pp. 3927-3932 ◽  
Author(s):  
Wei Liu ◽  
Biyun Li Jackson ◽  
Jing Zhu ◽  
Cong-Qin Miao ◽  
Choon-Heui, Chung ◽  
...  

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya

2009 ◽  
Vol 95 (2) ◽  
pp. 022111 ◽  
Author(s):  
Simon Haas ◽  
Yukihiro Takahashi ◽  
Kazuo Takimiya ◽  
Tatsuo Hasegawa

2005 ◽  
Vol 871 ◽  
Author(s):  
J. Takey ◽  
T. Nishikaw ◽  
T. Takenobu ◽  
H. Shimotani ◽  
S. Kobayashi ◽  
...  

AbstractOrganosilane self-assembled monolayers, embedded in organic single-crystal field-effect transistors, significantly affect subthreshold properties in the transfer characteristics. The monolayer of either polarized or nearly unpolarized molecules is deposited on a SiO2/doped Si substrate before softly attaching a rubrene thin single crystal to form the “laminated crystal” transistors. As a result of effective passivation of the SiO2 surface, the device has achieved a subthreshold swing as low as 0.11 V/decade. It is also demonstrated that threshold gate voltage is shifted by polarization of the monolayers, indicating that threshold of the device is adjustable by the choice of silane materials. Both of the functions are closely associated with low-power applications such as logic-circuit components.


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