The Dirac Cone in Two-Dimensional Tetragonal Silicon Carbide:Ring Coupling Mechanism

Nanoscale ◽  
2021 ◽  
Author(s):  
Weixiang Kong ◽  
Xiaoliang Xiao ◽  
wangping wang xu ◽  
Rui Wang ◽  
Li-Yong Gan ◽  
...  

The exploration of novel two-Dimensional semimetallic materials is always an attractive topic. We propose a series of two-dimensional silicon carbide with a tetragonal lattice. The band structure of silicon carbide...

2020 ◽  
Vol 22 (12) ◽  
pp. 6619-6625 ◽  
Author(s):  
Xuming Qin ◽  
Yi Liu ◽  
Gui Yang ◽  
Dongqiu Zhao

The origin of Dirac cone band structure of 6,6,12-graphyne is revealed by a “mirror symmetry parity coupling” mechanism proposed with tight-binding method combined with density functional calculations.


2021 ◽  
Vol 868 ◽  
pp. 159201
Author(s):  
Qun Wei ◽  
Ying Yang ◽  
Guang Yang ◽  
Xihong Peng

2020 ◽  
Vol 124 (13) ◽  
pp. 7558-7565 ◽  
Author(s):  
Ji-kai Lyu ◽  
Wei-xiao Ji ◽  
Shu-feng Zhang ◽  
Chang-wen Zhang ◽  
Pei-ji Wang

NANO ◽  
2021 ◽  
Author(s):  
Arslan Usman ◽  
Abdul Sattar ◽  
Hamid Latif ◽  
Muhammad Imran

The impact of phonon and their surrounding environment on exciton and its complexes were investigated in monolayer WSe2 semiconductor. Phonon up-conversion has been studied in past for conventional III–V semiconductors, but its role in two-dimensional layered transition metal dichalcogenides has rarely been explored. We investigated the photoluminescence up-conversion mechanism in WSe2 monolayer and found that a lower energy photon gain energy upto 64[Formula: see text]meV to be up-converted to emission photon at room temperature. Moreover, the phonon-exciton coupling mechanism has also been investigated and the role of dielectric screening has been explored to get complete insight of coulomb’s interaction in these electron-hole pairs. Investigations of charge carrier’s lifetime reveal that boron nitride encapsulated monolayer has shorter recombination time as low as 41 ps as compared to a bare monolayer on SiO2 substrate. These results are very promising for realizing spintronics-based application from two-dimensional layered semiconductors.


2021 ◽  
Vol 104 (23) ◽  
Author(s):  
Haibo Yao ◽  
Mingfeng Zhu ◽  
Liwei Jiang ◽  
Yisong Zheng

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