Characterization of the low energy conformations and differential reactivities of D-glucose and D-mannose based oxepines

Author(s):  
Caleb Griesbach ◽  
Mark Peczuh

Carbohydrate-based oxepines are valuable intermediates for the synthesis of septanose carbohydrates. Here we report the characterization of the preferred conformations of D-glucose and D-mannose based oxepines 1 and 2 using...

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.


2004 ◽  
Vol 70 (14) ◽  
Author(s):  
H. Hiraka ◽  
P. Böni ◽  
K. Yamada ◽  
S. Park ◽  
S-. H. Lee ◽  
...  

Author(s):  
C. Ballesteros ◽  
J. A. Garci´a ◽  
M. I. Orti´z ◽  
R. Rodri´guez ◽  
M. Varela

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.


2014 ◽  
Vol 7 (6) ◽  
pp. 595-614 ◽  
Author(s):  
Philip Delff Andersen ◽  
María José Jiménez ◽  
Henrik Madsen ◽  
Carsten Rode
Keyword(s):  

2016 ◽  
Vol 733 ◽  
pp. 012090
Author(s):  
N F Silva ◽  
M Xavier ◽  
V Vivolo ◽  
L V E Caldas

2018 ◽  
Vol 24 (S1) ◽  
pp. 2074-2075
Author(s):  
Bradley T. De Gregorio ◽  
Rhonda M. Stroud ◽  
Larry R. Nittler ◽  
Conel M. O’D. Alexander ◽  
Jemma Davidson ◽  
...  
Keyword(s):  

Metals ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 283 ◽  
Author(s):  
Massimo Sanctis ◽  
Alessandra Fava ◽  
Gianfranco Lovicu ◽  
Roberto Montanari ◽  
Maria Richetta ◽  
...  

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.


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