Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

Author(s):  
C. Ballesteros ◽  
J. A. Garci´a ◽  
M. I. Orti´z ◽  
R. Rodri´guez ◽  
M. Varela

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.


2010 ◽  
Vol 25 (5) ◽  
pp. 880-889 ◽  
Author(s):  
Zhi-Hui Xu ◽  
Young-Bae Park ◽  
Xiaodong Li

Ion implantation has been widely used to improve the mechanical and tribological properties of single crystalline silicon, an essential material for the semiconductor industry. In this study, the effects of four different ion implantations, Ar, C, N, and Ne ions, on the mechanical and tribological properties of single crystal Si were investigated at both the nanoscale and the microscale. Nanoindentation and microindentation were used to measure the mechanical properties and fracture toughness of ion-implanted Si. Nano and micro scratch and wear tests were performed to study the tribological behaviors of different ion-implanted Si. The relationship between the mechanical properties and tribological behavior and the damage mechanism of scratch and wear were also discussed.


Author(s):  
Takayuki Shima ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Tsutomu Iida ◽  
Hirokazu Sanpei ◽  
...  

2005 ◽  
Vol 108-109 ◽  
pp. 303-308 ◽  
Author(s):  
N. Cherkashin ◽  
Martin J. Hÿtch ◽  
Fuccio Cristiano ◽  
A. Claverie

In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of 1x1015 ions/cm2 and annealed at 650°C and 750°C during different times up to 160 s. The clusters were characterized by making use of Weak Beam and High Resolution Transmission Electron Microscopy (HRTEM) imaging. They are found to be platelets of several nanometer size with (001) habit plane. Conventional TEM procedure based on defect contrast behavior was applied to determine the directions of their Burger’s vectors. Geometric Phase Analysis of HRTEM images was used to measure the displacement field around these objects and, thus, to unambiguously determine their Burger’s vectors. Finally five types of dislocation loops lying on (001) plane are marked out: with ] 001 [1/3 ≅ b and b ∝ [1 0 1], [-1 0 1], [0 1 1], [0 -1 1].


2004 ◽  
Vol 188-189 ◽  
pp. 459-465 ◽  
Author(s):  
J.A. García ◽  
G.G. Fuentes ◽  
R. Martínez ◽  
R.J. Rodríguez ◽  
G. Abrasonis ◽  
...  

2005 ◽  
Vol 892 ◽  
Author(s):  
Steven Boeykens ◽  
Maarten Leys ◽  
Marianne Germain ◽  
Jef Poortmans ◽  
Benny Van Daele ◽  
...  

AbstractApplication of SiC substrates instead of the most commonly used sapphire for the heteroepitaxial growth of III-Nitrides offers advantages as better lattice matching, higher thermal conductivity, and electrical conductivity. This namely offers interesting perspectives for the development of vertical III-Nitride devices for switching purposes. For example, an AlGaN/SiC heterojunction could improve the performance of SiC bipolar transistors. In this work, n-type GaN layers have been grown by MOVPE on p-type 4H-SiC substrates using Si doped Al0.08Ga0.92N or Al0.3Ga0.7N nucleation layers. They have been characterized with temperature dependent current-voltage (I-V-T), capacitance-voltage (C-V) techniques and transmission electron microscopy (TEM).


1999 ◽  
Vol 585 ◽  
Author(s):  
J. W. Gerlach ◽  
D. Schrupp ◽  
R. Schwertberger ◽  
B. Rauschenbach ◽  
A. Anders

AbstractThe deposition of thin epitaxial hexagonal gallium nitride films on c-plane sapphire by low-energy nitrogen ion assisted deposition is shown to result in films of high crystalline quality. The quality can be further heightened by using the concept of an isothermal growth rate ramp. Characterization of film structure, defect density distribution and surface topography by XRD, RBS/C, and AFM, respectively, reveals the importance of the nitrogen ion energy and the ion to atom ratio on the film properties.


2018 ◽  
Vol 70 (2) ◽  
pp. 393-400 ◽  
Author(s):  
Shuhaib Mushtaq ◽  
Mohd Farooq Wani

Purpose This paper aims to investigate the effect of varying Wt.% (0-3 per cent) of graphite as a solid lubricant on the tribological properties of Fe-Cu-Sn alloy. Design/methodology/approach Powder metallurgy technique is used for the fabrication of Fe-Cu-Sn alloy with varying Wt.% of graphite. The tribological tests were conducted on a ball-on-disc universal tribometer under different testing conditions. Findings The friction coefficient decreases with sliding distance and load, but the wear rate increases with the increase in load. The G3 composition showed the best tribological properties under dry conditions. The wear mechanism of G0 composition shows adhesive wear and abrasive wear, while G1, G2 and G3 compositions show mildly abrasive wear. Originality/value This paper reported a new, cheap and wear-resistant self-lubricating Fe matrix material for gears and bearings.


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