Enhancing the Brightness of CsPbBr3 Quantum Dots Electroluminescence Light-Emitting Diodes through the Manipulation of PEDOT:PSS Films

2021 ◽  
Author(s):  
zhen Wang ◽  
Yue Peng ◽  
wei Wei Chen ◽  
sheng Yong Lu ◽  
sheng Xiao Tang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Energy Level ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Light Emitting ◽  
Styrene Sulfonate ◽  
Poly Styrene Sulfonate ◽  
Cspbbr3 Quantum Dots ◽  
Proper Energy

With solution-processability, low-temperature proper energy level and superior stability, Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is one common hole-transport material for the quantum dots light-emitting diodes (QLED) application. However, the conductivity of the...

scholarly journals 23% power conversion efficiency light-emitting diodes using monolayer quantum dots

2021 ◽  
Author(s):  
Fengjia Fan ◽  
Yan Gao ◽  
Xiaonan Liu ◽  
Bo Li ◽  
Huaibin Shen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Bias Voltage ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Power Conversion ◽  
Hole Transport ◽  
Light Emitting ◽  
Large Size ◽  
Recombination Current ◽  
Conversion Efficiencies

Abstract Ever since the first proposal of using colloidal quantum dots (QDs) as the active emitting layer of light-emitting diode (LED), a monolayer of QD is considered as a better option than the multilayer ones. Owing to the slow charge transport rate among different QD layers, quantum dot light-emitting diodes (QLEDs) adopting multilayer QDs need to be driven at higher than the bandgap bias voltage to achieve practically useful brightness, resulting in increased power consumptions and heat generations, and reduced device lifetimes. Unfortunately, QLEDs using monolayer QDs always suffer from unwanted recombination in hole transport layers (HTLs) and low external quantum efficiencies (EQEs) as a result of electron overflow from QDs into HTLs. Herein, we tackle this dilemma by packing QDs with large size into monolayers, which enables us to mitigate the unwanted electron overflow and retain high EQE. More importantly, it further allows us to boost the irradiative recombination current at bandgap voltage. By virtue of simultaneously obtained high EQE and irradiative recombination rate, we can achieve brightness of 1,100 cd m-2 and 3,000 cd m-2 at 100% and 105% bandgap voltages with record high power conversion efficiencies (PCEs) of 23% and 22%, respectively. Since heat generation has been depressed and devices can be operated at reduced bias voltage, they show unprecedented T95 operation lifetimes (the time for the luminance to decrease to 95% of the initial value) of more than 4,000 h with an initial brightness of 3,000 cd m-2, and equivalent T95 lifetimes of more than 20,000 h at 1,000 cd m-2.

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